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1-μm Short-Channel Oxide Thin-Film Transistors With Triangular Gate Spacer
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- Authors
- Ji Hun Choi, Jong-Heon Yang, Jae-Eun Pi, Chi-Young Hwang, Kyunghee Choi, Hee-Ok Kim, Oh-Sang Kwon, Chi-Sun Hwang
- Issue Date
- 2017-10
- Citation
- IEEE Electron Device Letters, v.38, no.10, pp.1398-1400
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Project Code
- 17MF1200, Development of Telecommunications Terminal with Digital Holographic Table-top Display, Jin Woong Kim
- Abstract
- In this letter, high-performance back-channel etch type oxide thin-film transistors (TFTs) with very narrow channel length, 1μ m , are presented. To cover the steep slope at the dry-etched gate pattern edge with a thin gate insulator, a triangular-shaped gate spacer was introduced. A 1- μm short-channel oxide TFT is particularly adaptable to next-generation display applications requiring very high resolution. The field-effect mobility (μFE) , subthreshold slope, turn-on voltage (V-on) , and the on/off ratio were 55.2 cm2/Vs, 0.11 V/decade, 0.13 V, and 6.8× 109 , respectively.
- KSP Keywords
- 3 V, Channel Length, Display applications, Gate insulator, High performance, Narrow channel, Next-generation, Oxide TFTs, Short channel, Subthreshold slope(SS), Thin-Film Transistor(TFT)