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Journal Article
Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric
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- Authors
- Maruf A. Bhuiyan, Hong Zhou, Sung-Jae Chang, Xiabing Lou, Xian Gong, Rong Jiang, Huiqi Gong, En Xia Zhang, Chul-Ho Won, Jong-Won Lim, Jung-Hee Lee, Roy G. Gordon, Robert A. Reed, Daniel M. Fleetwood, Peide Ye, Tso-Ping Ma
- Issue Date
- 2018-01
- Citation
- IEEE Transactions on Nuclear Science, v.65, no.1, pp.46-52
- ISSN
- 0018-9499
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- The radiation hardness of AlGaN/GaN high-electron-mobility transistors (HEMTs) is found to improve with increasing GaN channel thickness. Epitaxial MgCaO shows promise as a radiation-tolerant gate dielectric, with only small shifts in operating parameters of metal-oxide-semiconductor HEMTs observed at doses up to 1 Mrad(SiO2). Bias-induced electron trapping and radiation-induced-hole trapping can occur in the MgCaO, depending on the applied bias during stress and/or irradiation. AC transconductance measurements are used to help understand charge trapping in these devices.
- KSP Keywords
- Channel thickness, Charge trapping, GaN-Based, High electron mobility transistor(HEMT), Metal-oxide(MOX), Radiation hardness, Radiation-induced, applied bias, electron trapping, gate dielectric, hole trapping