상세정보
학술지
Total Ionizing Dose Responses of GaN-based HEMTs with Different Channel Thicknesses and MOSHEMTs with Epitaxial MgCaO as Gate Dielectric
- 저자
- Maruf A. Bhuiyan, Hong Zhou, 장성재, Xiabing Lou, Xian Gong, Rong Jiang, Huiqi Gong, En Xia Zhang, 원철호, 임종원, 이정희, Roy G. Gordon, Robert A. Reed, Daniel M. Fleetwood, Peide Ye, Tso-Ping Ma
- 발행일
- 201801
- 출처
- IEEE Transactions on Nuclear Science, v.65 no.1, pp.46-52
- ISSN
- 0018-9499
- 출판사
- IEEE
- 협약과제
- 17HB2400, 고효율 GaN 기반 기지국/단말기용 핵심부품 및 모듈 개발, 임종원
- 초록
- The radiation hardness of AlGaN/GaN high-electron-mobility transistors (HEMTs) is found to improve with increasing GaN channel thickness. Epitaxial MgCaO shows promise as a radiation-tolerant gate dielectric, with only small shifts in operating parameters of metal-oxide-semiconductor HEMTs observed at doses up to 1 Mrad(SiO2). Bias-induced electron trapping and radiation-induced-hole trapping can occur in the MgCaO, depending on the applied bias during stress and/or irradiation. AC transconductance measurements are used to help understand charge trapping in these devices.
- KSP 제안 키워드
- Channel thickness, Charge trapping, GaN-Based, High electron mobility transistor(HEMT), Metal-oxide(MOX), Radiation hardness, Radiation-induced, applied bias, electron trapping, gate dielectric, hole trapping