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Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatment
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- Authors
- Moonshik Kang, Servin Rathi, Inyeal Lee, Lijun Li, Muhammad Atif Khan, Dongsuk Lim, Yoontae Lee, Jinwoo Park, Sun Jin Yun, Doo-Hyeb Youn, Chungsam Jun, Gil-Ho Kim
- Issue Date
- 2017-01
- Citation
- Nanoscale, v.9, no.4, pp.1645-1652
- ISSN
- 2040-3364
- Publisher
- Royal Society of Chemistry (RSC)
- Language
- English
- Type
- Journal Article
- Abstract
- HfSe2 field effect transistors are systematically studied in order to selectively tune their electrical properties by optimizing layer thickness and oxygen plasma treatment. The optimized plasma-treated HfSe2 field effect transistors showed a high on/off ratio improvement of four orders of magnitude, from 27 to 105, a field effect mobility increase from 2.16 to 3.04 cm2 V-1 s-1, a subthreshold swing improvement from 30.6 to 4.8 V dec-1, and a positive threshold voltage shift between depletion mode and enhancement mode, from -7.02 to 11.5 V. The plasma-treated HfSe2 photodetector also demonstrates a reasonable photoresponsivity from the visible to the near-infrared region of light.
- KSP Keywords
- Electrical properties, Enhancement mode(E-mode), Field Effect Transistor(FET), First Stokes(S1), Layer thickness, Near-infrared region, Orders of magnitude, Plasma-treated, Threshold voltage shift, depletion-mode, field-effect mobility