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Junctionless Diode Enabled by Self-Bias Effect of Ion Gel in Single- Layer MoS2 Device
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- Authors
- Muhammad Atif Khan, Servin Rathi, Jinwoo Park, Dongsuk Lim, Yoontae Lee, Sun Jin Yun, Doo-Hyeb Youn, Gil-Ho Kim
- Issue Date
- 2017-07
- Citation
- ACS Applied Materials & Interfaces, v.9, no.32, pp.26983-26989
- ISSN
- 1944-8244
- Publisher
- American Chemical Society(ACS)
- Language
- English
- Type
- Journal Article
- Abstract
- The self-biasing effects of ion gel from source and drain electrodes on electrical characteristics of single layer and few layer molybdenum disulfide (MoS2) field-effect transistor (FET) have been studied. The self-biasing effect of ion gel is tested for two different configurations, covered and open, where ion gel is in contact with either one or both, source and drain electrodes, respectively. In open configuration, the linear output characteristics of the pristine device becomes nonlinear and on-off ratio drops by 3 orders of magnitude due to the increase in "off" current for both single and few layer MoS2 FETs. However, the covered configuration results in a highly asymmetric output characteristics with a rectification of around 103 and an ideality factor of 1.9. This diode like behavior has been attributed to the reduction of Schottky barrier width by the electric field of self-biased ion gel, which enables an efficient injection of electrons by tunneling at metal-MoS2 interface. Finally, finite element method based simulations are carried out and the simulated results matches well in principle with the experimental analysis. These self-biased diodes can perform a crucial role in the development of high-frequency optoelectronic and valleytronic devices.
- KSP Keywords
- Barrier width, Field-effect transistors(FETs), Finite Element Method(FEM), High Frequency(HF), Open configuration, Orders of magnitude, Schottky barrier, Self-biased, Single-layer, Source and drain, electric field