상세정보
학술지
Junctionless Diode Enabled by Self-Bias Effect of Ion Gel in Single- Layer MoS2 Device
- 발행일
- 201707
- 출처
- ACS Applied Materials & Interfaces, v.9 no.32, pp.26983-26989
- ISSN
- 1944-8244
- 출판사
- American Chemical Society(ACS)
- 협약과제
- 17HB1300, 차세대 신기능 스마트디바이스 플랫폼을 위한 대면적 이차원소재 및 소자 원천기술 개발, 윤선진
- 초록
- The self-biasing effects of ion gel from source and drain electrodes on electrical characteristics of single layer and few layer molybdenum disulfide (MoS2) field-effect transistor (FET) have been studied. The self-biasing effect of ion gel is tested for two different configurations, covered and open, where ion gel is in contact with either one or both, source and drain electrodes, respectively. In open configuration, the linear output characteristics of the pristine device becomes nonlinear and on-off ratio drops by 3 orders of magnitude due to the increase in "off" current for both single and few layer MoS2 FETs. However, the covered configuration results in a highly asymmetric output characteristics with a rectification of around 103 and an ideality factor of 1.9. This diode like behavior has been attributed to the reduction of Schottky barrier width by the electric field of self-biased ion gel, which enables an efficient injection of electrons by tunneling at metal-MoS2 interface. Finally, finite element method based simulations are carried out and the simulated results matches well in principle with the experimental analysis. These self-biased diodes can perform a crucial role in the development of high-frequency optoelectronic and valleytronic devices.
- KSP 제안 키워드
- Barrier width, Field-effect transistors(FETs), Finite Element Method(FEM), High Frequency(HF), Open configuration, Orders of magnitude, Schottky barrier, Self-biased, Single-layer, Source and drain, electric field