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Journal Article
6-GHz-to-18-GHz AlGaN/GaN Cascaded Nonuniform Distributed Power Amplifier MMIC Using Load Modulation of Increased Series Gate Capacitance
- Authors
- Dong-Hwan Shin, In-Bok Yom, Dong-Wook Kim
- Issue Date
- 2017-10
- Citation
- ETRI Journal, v.39, no.5, pp.737-745
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- A 6-GHz-to-18-GHz monolithic nonuniform distributed power amplifier has been designed using the load modulation of increased series gate capacitance. This amplifier was implemented using a 0.25-lm AlGaN/GaN HEMT process on a SiC substrate. With the proposed load modulation, we enhanced the amplifier's simulated performance by 4.8 dB in output power, and by 13.1% in power-added efficiency (PAE) at the upper limit of the bandwidth, compared with an amplifier with uniform gate coupling capacitors. Under the pulse-mode condition of a 100-ls pulse period and a 10% duty cycle, the fabricated power amplifier showed a saturated output power of 39.5 dBm (9 W) to 40.4 dBm (11 W) with an associated PAE of 17% to 22%, and input/output return losses of more than 10 dB within 6 GHz to 18 GHz.
- KSP Keywords
- 18 GHz, 6 GHz, AlGaN/GaN HEMTs, Duty cycle(DC), Load modulation, Power added efficiency(PAE), Power amplifier MMIC, Pulse period, Return Loss, Saturated output power, SiC substrate