상세정보
학술지
6-GHz-to-18-GHz AlGaN/GaN Cascaded Nonuniform Distributed Power Amplifier MMIC Using Load Modulation of Increased Series Gate Capacitance
- 발행일
- 201710
- 출처
- ETRI Journal, v.39 no.5, pp.737-745
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 17JR1200, MMIC 기반 X-band GaN SSPA 상세설계 및 인증, 염인복
- 초록
- A 6-GHz-to-18-GHz monolithic nonuniform distributed power amplifier has been designed using the load modulation of increased series gate capacitance. This amplifier was implemented using a 0.25-lm AlGaN/GaN HEMT process on a SiC substrate. With the proposed load modulation, we enhanced the amplifier's simulated performance by 4.8 dB in output power, and by 13.1% in power-added efficiency (PAE) at the upper limit of the bandwidth, compared with an amplifier with uniform gate coupling capacitors. Under the pulse-mode condition of a 100-ls pulse period and a 10% duty cycle, the fabricated power amplifier showed a saturated output power of 39.5 dBm (9 W) to 40.4 dBm (11 W) with an associated PAE of 17% to 22%, and input/output return losses of more than 10 dB within 6 GHz to 18 GHz.
- KSP 제안 키워드
- 18 GHz, 6 GHz, AlGaN/GaN HEMTs, Duty cycle(DC), Gate capacitance, Power added efficiency(PAE), Power amplifier MMIC, Pulse period, Return loss(RL), Saturated output power, SiC substrate