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Conference Paper
A 21.9-dB Gain 18.9-35.9-GHz Low Noise Amplifier Using InGaAs E-mode 0.15-um pHEMT Technology
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- Authors
- Sunwoo Kong, Hui Dong Lee, Cheol Ho Kim, Bonghyuk Park
- Issue Date
- 2017-11
- Citation
- Asia-Pacific Microwave Conference (APMC) 2017, pp.1203-1206
- Language
- English
- Type
- Conference Paper
- Project Code
- 17HF1700, Development on millimeter-wave beamforming IC for 5G mobile communication, Kim Kwang Seon
- Abstract
- We propose a millimeter-wave (mm-wave) InGaAs enhancement-mode (E-mode) 0.15-um pHEMT low-noise amplifier (LNA). The LNA achieves 21.9-dB gain with simulation results of 2.19-dB noise figure (NF) and 9.9-dBm P1dB using 3-V power supply as it consumes 9 mA. The bandwidth of the LNA is 17 GHz (from 18.9 GHz to 35.9 GHz) and the fractional bandwidth (FBW) is 62 %.
- KSP Keywords
- 17 GHz, 5.9 GHz, E-mode, Fractional Bandwidth(FBW), Noise Figure(NF), enhancement-mode, low noise amplifier(LNA), power supply, simulation results