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학술지 Effects of Er-Doping on Amorphous InZnSnO/InZnSnO : Er Double-Channel Thin-Film Transistors
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저자
양지웅, 나윤빈, 신재헌, 홍찬화, 서우형, 김경현, 송창우, 송상훈, 권혁인, 정우석
발행일
201705
출처
Journal of Nanoscience and Nanotechnology, v.17 no.5, pp.3415-3419
ISSN
1533-4880
출판사
American Scientific Publishers (ASP)
DOI
https://dx.doi.org/10.1166/jnn.2017.14069
협약과제
15PB2600, 대면적 투명플렉시블 디스플레이 구현을 위한 60인치이상, UD급, 투과도 40%인 패널/모듈 기술개발, 정우석
초록
We study the effects of Er-doping on the electrical performances and stabilities of amorphous InZn-SnO(IZTO)/IZTO:Er double-channel thin-film transistors (TFTs). Compared to conventional IZTO single-channel TFTs, the IZTO(front)/IZTO:Er(back) double-channel TFTs exhibits higher field-effect mobility and improved stability under both positive and negative bias stresses. From the X-ray photoelectron spectroscopy for the double channel, we observe that Er doping contributes to an enhancement of the oxygen bonding and a reduction of oxygen vacancies in the IZTO thin-film. These results show that the Er can be an effective carrier suppressor in IZTO-based TFTs.
KSP 제안 키워드
Er doping, Improved stability, Negative bias, Oxygen vacancies, Positive and negative, Reduction of oxygen, Single Channel, Thin-Film Transistor(TFT), X-ray Photoelectron Spectroscopy, double-channel, field-effect mobility