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Journal Article
Large Size of Capacitive Window-Unified TSP Using by Contact Hole Type as an Insulator
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- Authors
- Woo-Hyung Seo, Chan-Hwa Hong, Ji-Woong Yang, Yun-Been Na, Hyuck-In Kwon, Woo-Seok Cheong
- Issue Date
- 2017-05
- Citation
- Journal of Nanoscience and Nanotechnology, v.17, no.5, pp.3089-3091
- ISSN
- 1533-4880
- Publisher
- American Scientific Publishers (ASP)
- Language
- English
- Type
- Journal Article
- Abstract
- We developed 30?꿎?? window-unified capacitive touch screen panel (G2-TSP), where the transparent electrodes for sensing and driving lines were directly patterned on the glass. In this study, indexmatched ITO as the main electrode was fabricated using by sputtering system which had sheet resistance of 30 ohm/square and transmittance of 88.6% at wavelength of 550 nm. We used SiOC of contact-hole type as a dielectric layer for high deposition rate and etching selectivity. Finally, we developed copper material (110 nm-thick) as bridge and bezel metal with sheet resistance of 2 ohm/square. From these processes, we successfully fabricated the 30 inch G2 TSP with noshort and open parts of TSP-cells. We fabricated G2 TSP with the wet-etching process, linearity of 0.86 mm and accuracy of 0.83 mm have been achieved.
- KSP Keywords
- Capacitive Touch screen, Contact hole, Etching process, Etching selectivity, High deposition rate, Hole type, Sputtering system, Wet etching, copper material, dielectric layer, large size