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Detail
Journal Article
실리콘-화합물 융합 반도체 소자 기술 동향
- Issue Date
- 2017-12
- Citation
- 전자통신동향분석, v.32, no.6, pp.8-16
- ISSN
- 1225-6455
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- Korean
- Type
- Journal Article
- Abstract
- In this paper, we review studies attempting to triumph over the limitation of Si-based semiconductor technologies through a heterogeneous integration of high mobility compound semiconductors on a Si substrate, and the co-integration of electronic and/or optical devices. Many studies have been conducted on the heterogeneous integration of various materials to overcome the Si semiconductor performance and obtain multi-purpose functional devices. On the other hand, many research groups have invented device fusion technologies of electrical and optical devices on a Si substrate. They have co-integrated Si-based CMOS and InGaAs-based optical devices, and Ge-based electrical and optical devices. In addition, chip and wafer bonding techniques through TSV and TOV have been introduced for the co-integration of electrical and optical devices. Such intensive studies will continue to overcome the device-scaling limitation and short-channel effects of a MOS transistor that Si devices have faced using a heterogeneous integration of Si and a high mobility compound semiconductor on the same chip and/or wafer.
- KSP Keywords
- Co-integration, Ge-Based, High Mobility, MOS transistor, Optical devices, Si devices, Si semiconductor, Si substrate, Si-based, Wafer Bonding, compound semiconductor
This work is distributed under the term of Korea Open Government License (KOGL)
(Type 4: : Type 1 + Commercial Use Prohibition+Change Prohibition)
(Type 4: : Type 1 + Commercial Use Prohibition+Change Prohibition)
