In this study, we analyzed the effect of post-annealing on solution-processed indium oxide thin-film transistors (TFT) with the aim of achieving high performance while taking advantage of the low processing temperatures. Before post-annealing, the indium oxide film does not show TFT channel characteristics and has no on/off ratio. However, after post-annealing, the device has the characteristics of high-performance TFTs, namely a high mobility (18.01 cm 2 V -1 s -1 ), an on/off current ratio of ∼10 5 , and a threshold voltage of -1.91 V. The postannealing effect was assessed by combining analytical methods such as X-ray photoemission spectroscopy and current-voltage measurements on films with different contact metals and post-annealed under different atmospheric conditions. Based on our experimental results, we suggest that the post-annealing effect, which involves a reduction in carrier concentration, originates with the loss of oxygen vacancies in the contact region by absorbing the oxygen present in the annealing atmosphere.
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J. Kim et. al, "Trends in Lightweight Kernel for Many core Based High-Performance Computing", Electronics and Telecommunications Trends. Vol. 32, No. 4, 2017, KOGL Type 4: Source Indication + Commercial Use Prohibition + Change Prohibition
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