BROWSE
Detail
Journal Article
Effect of Post-Annealing on Low-Temperature Solution-Processed High-Performance Indium Oxide Thin Film Transistors
Cited - time in 
Share 
Share
- Authors
- Yeon-Wha Oh, Hoon Kim, Kyu-Ha Baek, Lee-Mi Do, Ga-Won Lee, Chan-Mo Kang
- Issue Date
- 2018-04
- Citation
- Science of Advanced Materials, v.10, no.4, pp.518-521
- ISSN
- 1947-2935
- Publisher
- American Scientific Publishers
- Language
- English
- Type
- Journal Article
- Abstract
- In this study, we analyzed the effect of post-annealing on solution-processed indium oxide thin-film transistors (TFT) with the aim of achieving high performance while taking advantage of the low processing temperatures. Before post-annealing, the indium oxide film does not show TFT channel characteristics and has no on/off ratio. However, after post-annealing, the device has the characteristics of high-performance TFTs, namely a high mobility (18.01 cm 2 V -1 s -1 ), an on/off current ratio of ∼10 5 , and a threshold voltage of -1.91 V. The postannealing effect was assessed by combining analytical methods such as X-ray photoemission spectroscopy and current-voltage measurements on films with different contact metals and post-annealed under different atmospheric conditions. Based on our experimental results, we suggest that the post-annealing effect, which involves a reduction in carrier concentration, originates with the loss of oxygen vacancies in the contact region by absorbing the oxygen present in the annealing atmosphere.
- KSP Keywords
- Analytical Method, Annealing atmosphere, Carrier concentration, Channel Characteristics, Contact region, Current-Voltage measurements, High performance, ON/OFF ratio, Oxide film, Oxygen vacancy, Post-annealed