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Journal Article Effect of Post-Annealing on Low-Temperature Solution-Processed High-Performance Indium Oxide Thin Film Transistors
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Authors
Yeon-Wha Oh, Hoon Kim, Kyu-Ha Baek, Lee-Mi Do, Ga-Won Lee, Chan-Mo Kang
Issue Date
2018-04
Citation
Science of Advanced Materials, v.10, no.4, pp.518-521
ISSN
1947-2935
Publisher
American Scientific Publishers
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1166/sam.2018.3054
Abstract
In this study, we analyzed the effect of post-annealing on solution-processed indium oxide thin-film transistors (TFT) with the aim of achieving high performance while taking advantage of the low processing temperatures. Before post-annealing, the indium oxide film does not show TFT channel characteristics and has no on/off ratio. However, after post-annealing, the device has the characteristics of high-performance TFTs, namely a high mobility (18.01 cm 2 V -1 s -1 ), an on/off current ratio of ∼10 5 , and a threshold voltage of -1.91 V. The postannealing effect was assessed by combining analytical methods such as X-ray photoemission spectroscopy and current-voltage measurements on films with different contact metals and post-annealed under different atmospheric conditions. Based on our experimental results, we suggest that the post-annealing effect, which involves a reduction in carrier concentration, originates with the loss of oxygen vacancies in the contact region by absorbing the oxygen present in the annealing atmosphere.
KSP Keywords
Analytical Method, Annealing atmosphere, Carrier concentration, Channel Characteristics, Contact region, Current-Voltage measurements, High performance, ON/OFF ratio, Oxide film, Oxygen vacancy, Post-annealed