BROWSE
Detail
Journal Article
Effect of Post-Annealing on Low-Temperature Solution-Processed High-Performance Indium Oxide Thin Film Transistors
- Authors
- Yeon-Wha Oh, Hoon Kim, Kyu-Ha Baek, Lee-Mi Do, Ga-Won Lee, Chan-Mo Kang
- Issue Date
- 2018-04
- Citation
- Science of Advanced Materials, v.10 no.4, pp.518-521
- ISSN
- 1947-2935
- Publisher
- American Scientific Publishers
- Language
- English
- Type
- Journal Article
- Project Code
- 15PC2500, Synthesis of Oxide Semiconductor and Insulator Ink Materials and Process Development for Printed Backplane of Flexible Displays Processed Below 150 ºC, Do Lee-Mi
- KSP Keywords
- High performance, Low temperature(LT), Oxide thin films, Post-annealing, Solution-processed, Thin-Film Transistor(TFT), indium oxide, thin film(TF)