상세정보
학술지
Effect of Post-Annealing on Low-Temperature Solution-Processed High-Performance Indium Oxide Thin Film Transistors
- 발행일
- 201804
- 출처
- Science of Advanced Materials, v.10 no.4, pp.518-521
- ISSN
- 1947-2935
- 출판사
- American Scientific Publishers
- KSP 제안 키워드
- High performance, Low temperature(LT), Oxide thin films, Post-annealing, Solution-processed, Thin-Film Transistor(TFT), indium oxide, thin film(TF)