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Conference Paper
Design and Fabrication of 4H-SiC Lateral IGBT with Drift Segmentation using Trench Process
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- Authors
- Jong-Il Won, Kun-Sik Park, Doo-Hyung Cho, Jong-Moon Park, Sang-Gi Kim
- Issue Date
- 2018-02
- Citation
- 한국 반도체 학술 대회 (KCS) 2018, pp.826-826
- Language
- English
- Type
- Conference Paper
- Project Code
- 17ZB1400, Development of SiC based trench type next generation power device, Kim Sang Gi
- KSP Keywords
- 4H-SiC, Design and fabrication, Lateral IGBT