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Conference Paper Comparative Study of Normally-Off Al2O3/AlGaN/GaN MIS-HEMTs Fabricated by Gate Recess and F-treatment
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Authors
Hyun-Wook Jung, Min-Jeong Shin, Sung-Jae Chang, Jae-Won Do, Kyu-Jun Cho, Ho-Kyun Ahn, Byoung-Gue Min, Haecheon Kim, Hyung Sup Yoon, Ji-Heon Kim, Jin-Mo Yang, Jong-Won Lim
Issue Date
2018-02
Citation
한국 반도체 학술 대회 (KCS) 2018, pp.1-1
Language
English
Type
Conference Paper
Project Code
17DB1800, Development of GaN RF device, Jong-Won Lim
KSP Keywords
Gate recess, Normally-Off, comparative study