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학술지 Solution-Processed Flexible NiO Resistive Random Access Memory Device
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저자
김수정, 이헌, 홍성훈
발행일
201804
출처
Solid-State Electronics, v.142, pp.56-61
ISSN
0038-1101
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.sse.2018.02.006
협약과제
16MB1500, 차세대 고집적/고효율 유연 ICT 소자용 3D 창의 소재 원천 기술, 이명래
초록
Non-volatile memories (NVMs) using nanocrystals (NCs) as active materials can be applied to soft electronic devices requiring a low-temperature process because NCs do not require a heat treatment process for crystallization. In addition, memory devices can be implemented simply by using a patterning technique using a solution process. In this study, a flexible NiO ReRAM device was fabricated using a simple NC patterning method that controls the capillary force and dewetting of a NiO NC solution at low temperature. The switching behavior of a NiO NC based memory was clearly observed by conductive atomic force microscopy (c-AFM).
KSP 제안 키워드
Active materials, Atomic force microscope(AFM), Heat Treatment Process, Low temperature(LT), Low-temperature process, Non-Volatile Memory(NVM), Patterning technique, Resistive Random Access Memory(RRAM), Solution-processed, Switching behavior, c-AFM