상세정보
학술지
High Performance SONOS Flash Memory with In-Situ Silicon Nanocrystals Embedded in Silicon Nitride Charge Trapping Layer
- 저자
- 임재갑, 양승동, 윤호진, 정준교, 박정현, 임찬, 조규석, 박성제, 허철, 이희덕, 이가원
- 발행일
- 201802
- 출처
- Solid-State Electronics, v.140, pp.134-138
- ISSN
- 0038-1101
- 출판사
- Elsevier
- 협약과제
- 17HS2600, 심혈관질환을 위한 인공지능 주치의 기술 개발, 김승환
- 초록
- In this paper, SONOS-type flash memory device with highly improved charge-trapping efficiency is suggested by using silicon nanocrystals (Si-NCs) embedded in silicon nitride (SiNX) charge trapping layer. The Si-NCs were in-situ grown by PECVD without additional post annealing process. The fabricated device shows high program/erase speed and retention property which is suitable for multi-level cell (MLC) application. Excellent performance and reliability for MLC are demonstrated with large memory window of ~8.5 V and superior retention characteristics of 7% charge loss for 10 years. High resolution transmission electron microscopy image confirms the Si-NC formation and the size is around 1??2 nm which can be verified again in X-ray photoelectron spectroscopy (XPS) where pure Si bonds increase. Besides, XPS analysis implies that more nitrogen atoms make stable bonds at the regular lattice point. Photoluminescence spectra results also illustrate that Si-NCs formation in SiNx is an effective method to form deep trap states.
- KSP 제안 키워드
- Charge trapping layer, Deep traps, High performance, In-Situ, Lattice points, Multi-level Cell, Performance and Reliability, Photoluminescence spectra, Post-annealing, Retention properties, Silicon Nitride