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Journal Article High Performance SONOS Flash Memory with In-Situ Silicon Nanocrystals Embedded in Silicon Nitride Charge Trapping Layer
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Authors
Jae-Gab Lim, Seung-Dong Yang, Ho-Jin Yun, Jun-Kyo Jung, Jung-Hyun Park, Chan Lim, Gyu-seok Cho, Seong-gye Park, Chul Huh, Hi-Deok Lee, Ga-Won Lee
Issue Date
2018-02
Citation
Solid-State Electronics, v.140, pp.134-138
ISSN
0038-1101
Publisher
Elsevier
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1016/j.sse.2017.10.031
Abstract
In this paper, SONOS-type flash memory device with highly improved charge-trapping efficiency is suggested by using silicon nanocrystals (Si-NCs) embedded in silicon nitride (SiNX) charge trapping layer. The Si-NCs were in-situ grown by PECVD without additional post annealing process. The fabricated device shows high program/erase speed and retention property which is suitable for multi-level cell (MLC) application. Excellent performance and reliability for MLC are demonstrated with large memory window of ~8.5 V and superior retention characteristics of 7% charge loss for 10 years. High resolution transmission electron microscopy image confirms the Si-NC formation and the size is around 1??2 nm which can be verified again in X-ray photoelectron spectroscopy (XPS) where pure Si bonds increase. Besides, XPS analysis implies that more nitrogen atoms make stable bonds at the regular lattice point. Photoluminescence spectra results also illustrate that Si-NCs formation in SiNx is an effective method to form deep trap states.
KSP Keywords
Charge trapping layer, Deep traps, High performance, In-Situ, Lattice points, Multi-level Cell, Performance and Reliability, Photoluminescence spectra, Post-annealing, Retention properties, Silicon Nitride