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구분 SCI
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학술지 Interface and Bulk Properties of Cu(In,Ga)Se2 Solar Cell with a Cracker-ZnS Buffer Layer
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이우정, 조대형, 유지수, 유정수, 위재형, 한원석, 남윤성, 이연진, 장수경, 정용덕
Current Applied Physics, v.18 no.4, pp.405-410
17PB5100, 초경량 유연 CIGS 박막 모듈 공정장비 상용화 기술개발, 정용덕
Cu(In,Ga)Se2 (CIGS) solar cells were fabricated by varying the film thickness of the cracker-ZnS (c-ZnS) buffer layer from 0 nm to 20 nm, and performance was found to depend on c-ZnS film thickness. The best cell efficiency of approximately 8% was obtained from the CIGS solar cell with an 8 nm thick-c-ZnS buffer layer. To investigate the primary factor to determine the cell performance, we utilized the impedance spectroscopy (IS) reflecting interface qualities, and capacitance-voltage (CV) profiling sensitive to bulk properties. In IS results, an equivalent circuit model including the resistance and capacitance was proposed to interpret cell performance, and carrier lifetime was obtained in connection with recombination probability at p-n junction. In CV profiling, the carrier concentration in the CIGS bulk, the depletion width, and the charge distribution related to the defect states along the depth direction were evaluated. The formation mechanism of c-ZnS buffer layer is suggested by measuring the chemical states, which is closely associated with the IS and CV results. The depletion width substantially increased at c-ZnS film thickness more than 15 nm due to the diffusion of Zn atoms toward CIGS layer, resulting in negative influence on cell performance. From this study, we demonstrated that IS and CV profiling are complementary analysis tools for interpretation of the solar cell operation concerning the interface and bulk properties.
Capacitance voltage profiling, CIGS solar cell, Cracker-ZnS buffer layer, Impedance spectroscopy, p-n junction
KSP 제안 키워드
20 nm, 5 nm, Analysis tools, Bulk property, CIGS layer, CIGS solar cell, Capacitance voltage profiling, Carrier concentration, Cell Efficiency, Chemical states, Formation Mechanism