17PB5100, Development of Commercial Process Equipment for Light-weight Flexible CIGS Thin Film PV Module,
Chung Yong-Duck
Abstract
Cu(In,Ga)Se2 (CIGS) solar cells were fabricated by varying the film thickness of the cracker-ZnS (c-ZnS) buffer layer from 0 nm to 20 nm, and performance was found to depend on c-ZnS film thickness. The best cell efficiency of approximately 8% was obtained from the CIGS solar cell with an 8 nm thick-c-ZnS buffer layer. To investigate the primary factor to determine the cell performance, we utilized the impedance spectroscopy (IS) reflecting interface qualities, and capacitance-voltage (CV) profiling sensitive to bulk properties. In IS results, an equivalent circuit model including the resistance and capacitance was proposed to interpret cell performance, and carrier lifetime was obtained in connection with recombination probability at p-n junction. In CV profiling, the carrier concentration in the CIGS bulk, the depletion width, and the charge distribution related to the defect states along the depth direction were evaluated. The formation mechanism of c-ZnS buffer layer is suggested by measuring the chemical states, which is closely associated with the IS and CV results. The depletion width substantially increased at c-ZnS film thickness more than 15 nm due to the diffusion of Zn atoms toward CIGS layer, resulting in negative influence on cell performance. From this study, we demonstrated that IS and CV profiling are complementary analysis tools for interpretation of the solar cell operation concerning the interface and bulk properties.
The materials provided on this website are subject to copyrights owned by ETRI and protected by the Copyright Act. Any reproduction, modification, or distribution, in whole or in part, requires the prior explicit approval of ETRI. However, under Article 24.2 of the Copyright Act, the materials may be freely used provided the user complies with the following terms:
The materials to be used must have attached a Korea Open Government License (KOGL) Type 4 symbol, which is similar to CC-BY-NC-ND (Creative Commons Attribution Non-Commercial No Derivatives License). Users are free to use the materials only for non-commercial purposes, provided that original works are properly cited and that no alterations, modifications, or changes to such works is made. This website may contain materials for which ETRI does not hold full copyright or for which ETRI shares copyright in conjunction with other third parties. Without explicit permission, any use of such materials without KOGL indication is strictly prohibited and will constitute an infringement of the copyright of ETRI or of the relevant copyright holders.
J. Kim et. al, "Trends in Lightweight Kernel for Many core Based High-Performance Computing", Electronics and Telecommunications Trends. Vol. 32, No. 4, 2017, KOGL Type 4: Source Indication + Commercial Use Prohibition + Change Prohibition
J. Sim et.al, “the Fourth Industrial Revolution and ICT – IDX Strategy for leading the Fourth Industrial Revolution”, ETRI Insight, 2017, KOGL Type 4: Source Indication + Commercial Use Prohibition + Change Prohibition
If you have any questions or concerns about these terms of use, or if you would like to request permission to use any material on this website, please feel free to contact us
KOGL Type 4:(Source Indication + Commercial Use Prohibition+Change Prohibition)
Contact ETRI, Research Information Service Section
Privacy Policy
ETRI KSP Privacy Policy
ETRI does not collect personal information from external users who access our Knowledge Sharing Platform (KSP). Unathorized automated collection of researcher information from our platform without ETRI's consent is strictly prohibited.
[Researcher Information Disclosure] ETRI publicly shares specific researcher information related to research outcomes, including the researcher's name, department, work email, and work phone number.
※ ETRI does not share employee photographs with external users without the explicit consent of the researcher. If a researcher provides consent, their photograph may be displayed on the KSP.