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Journal Article Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching
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Authors
손동혁, 조영우, 원철호, 이준혁, 서재화, Lee Sang-Heung, Jong-Won Lim, 김지헌, 강인만, 크리스토로비아누 소린, 이정희
Issue Date
201803
Source
Solid-State Electronics, v.141, pp.7-12
ISSN
0038-1101
Publisher
Elsevier
DOI
https://dx.doi.org/10.1016/j.sse.2017.11.002
Project Code
17DB1800, Development of GaN RF device, Jong-Won Lim
Abstract
Normally-off AlGaN/GaN-based MOS-HEMT has been fabricated by utilizing damage-free self-terminating tetramethyl ammonium hydroxide (TMAH) recess etching. The device exhibited a threshold voltage of +2.0 V with good uniformity, extremely small hysteresis of ~20 mV, and maximum drain current of 210 mA/mm. The device also exhibited excellent off-state performances, such as breakdown voltage of ~800 V with off-state leakage current as low as ~10?닋12 A and high on/off current ratio (Ion/Ioff) of 1010. These excellent device performances are believed to be due to the high quality recessed surface, provided by the simple self-terminating TMAH etching.
KSP Keywords
Ammonium hydroxide, Breakdown voltage(BDV), Drain current, GaN-Based, Leakage current, MOS-HEMT, Normally-Off, ON/OFF current ratio, Off-state leakage, TMAH etching, threshold voltage(Vth)