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Journal Article
Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching
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- Authors
- Dong-Hyeok Son, Young-Woo Jo, Chul-Ho Won, Jun-Hyeok Lee, Jae Hwa Seo, Sang-Heung Lee, Jong-Won Lim, Ji Heon Kim, In Man Kang, Sorin Cristoloveanu, Jung-Hee Lee
- Issue Date
- 2018-03
- Citation
- Solid-State Electronics, v.141, pp.7-12
- ISSN
- 0038-1101
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- Normally-off AlGaN/GaN-based MOS-HEMT has been fabricated by utilizing damage-free self-terminating tetramethyl ammonium hydroxide (TMAH) recess etching. The device exhibited a threshold voltage of +2.0 V with good uniformity, extremely small hysteresis of ~20 mV, and maximum drain current of 210 mA/mm. The device also exhibited excellent off-state performances, such as breakdown voltage of ~800 V with off-state leakage current as low as ~10?닋12 A and high on/off current ratio (Ion/Ioff) of 1010. These excellent device performances are believed to be due to the high quality recessed surface, provided by the simple self-terminating TMAH etching.
- KSP Keywords
- Ammonium hydroxide, Breakdown voltage(BDV), Drain current, GaN-Based, Leakage current, MOS-HEMT, Normally-Off, ON/OFF current ratio, Off-state leakage, TMAH etching, threshold voltage(Vth)