상세정보
학술지
Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching
- 발행일
- 201803
- 출처
- Solid-State Electronics, v.141, pp.7-12
- ISSN
- 0038-1101
- 출판사
- Elsevier
- 협약과제
- 17DB1800, GaN RF 전력증폭 소자 설계 개발, 임종원
- 초록
- Normally-off AlGaN/GaN-based MOS-HEMT has been fabricated by utilizing damage-free self-terminating tetramethyl ammonium hydroxide (TMAH) recess etching. The device exhibited a threshold voltage of +2.0 V with good uniformity, extremely small hysteresis of ~20 mV, and maximum drain current of 210 mA/mm. The device also exhibited excellent off-state performances, such as breakdown voltage of ~800 V with off-state leakage current as low as ~10?닋12 A and high on/off current ratio (Ion/Ioff) of 1010. These excellent device performances are believed to be due to the high quality recessed surface, provided by the simple self-terminating TMAH etching.
- KSP 제안 키워드
- Ammonium hydroxide, Breakdown voltage(BDV), Drain current, GaN-Based, Leakage current, MOS-HEMT, Normally-Off, ON/OFF current ratio, Off-state leakage, TMAH etching, threshold voltage(Vth)