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Conference Paper
Breakdown and Power Characteristics of GaN HEMTs with a Variation of Device Dimensions for S-band Applications
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- Authors
- Jong-Min Lee, Hae Cheon Kim, Yu-Jin Jang, Ho-Kyun Ahn, Jae-Won Do, Sang-Heung Lee, Dong Min Kang, Jong-Won Lim
- Issue Date
- 2018-02
- Citation
- 한국 반도체 학술 대회 (KCS) 2018, pp.667-667
- Language
- English
- Type
- Conference Paper
- Project Code
- 17DB1800, Development of GaN RF device, Jong-Won Lim
- KSP Keywords
- GaN HEMT, Power characteristics, S-Band