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Highly Stable AlInZnSnO and InZnO Double-Layer Oxide Thin-Film Transistors With Mobility Over 50 cm2/V·s for High-Speed Operation
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- Authors
- Jong-Heon Yang, Ji Hun Choi, Sung Haeng Cho, Jae-Eun Pi, Hee-Ok Kim, Chi-Sun Hwang, KeeChan Park, Seunghyup Yoo
- Issue Date
- 2018-04
- Citation
- IEEE Electron Device Letters, v.39, no.4, pp.508-511
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- We present high-mobility back channel etch Al-In-Zn-Sn-O/In-Zn-O (IZO) double-layer channel thin-film transistors (TFTs). The field-effect mobility of 53.2, threshold voltage of 0.5 V, and subthreshold swing of 0.15 V/decade were obtained with a thin IZO-inserted double-layer channel TFT. The positive bias stability was improved with an IZO-inserted double-layer channel. We fabricated 13-stage ring oscillators, which exhibited an oscillating frequency of 296 kHz at. These results demonstrate that the proposed double-layer channel oxide TFT can be used for demanding applications such as backplane devices for ultrahigh resolution display.
- KSP Keywords
- Al-In, Bias stability, Double layer, High-speed operation, Highly stable, In-Zn-O, In-Zn-Sn-O, Oscillating frequency, Oxide TFTs, Positive bias, Thin-Film Transistor(TFT)