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학술지 Highly Stable AlInZnSnO and InZnO Double-Layer Oxide Thin-Film Transistors With Mobility Over 50 cm2/V·s for High-Speed Operation
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저자
양종헌, 최지훈, 조성행, 피재은, 김희옥, 황치선, 박기찬, 유승협
발행일
201804
출처
IEEE Electron Device Letters, v.39 no.4, pp.508-511
ISSN
0741-3106
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LED.2018.2805705
초록
We present high-mobility back channel etch Al-In-Zn-Sn-O/In-Zn-O (IZO) double-layer channel thin-film transistors (TFTs). The field-effect mobility of 53.2, threshold voltage of 0.5 V, and subthreshold swing of 0.15 V/decade were obtained with a thin IZO-inserted double-layer channel TFT. The positive bias stability was improved with an IZO-inserted double-layer channel. We fabricated 13-stage ring oscillators, which exhibited an oscillating frequency of 296 kHz at. These results demonstrate that the proposed double-layer channel oxide TFT can be used for demanding applications such as backplane devices for ultrahigh resolution display.
KSP 제안 키워드
Al-In, Double layer, High Mobility, Highly stable, In-Zn-O, In-Zn-Sn-O, Oscillating frequency, Oxide TFTs, Positive bias, Thin-Film Transistor(TFT), Ultra-high resolution