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학술지 The Detailed Analysis of High Q CMOS-Compatible Microwave Spiral Inductors in Silicon Technology
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저자
박민, 이성현, 김천수, 유현규, 남기수
발행일
199809
출처
IEEE Transactions on Electron Devices, v.45 no.9, pp.1953-1959
ISSN
0018-9383
출판사
IEEE
DOI
https://dx.doi.org/10.1109/16.711361
초록
We present the extensive experimental results and their detailed analysis showing the important effects of layout parameters on the frequency responses of quality factor (Q) of rectangular spiral inductors, which are fabricated on a silicon substrate by using conventional silicon CMOS technology, in order to determine the desirable values of layout parameters for designing the high Q inductors used in RF IC's applications. Analysis of the inductors on Si substrates with three kinds of resistivities has been performed by tailoring the geometric layout and varying the metal thickness. Using these results, the substrate effects on RF performance of inductors are also investigated by observing the frequency responses of Q with varying the substrate resistivity in detail. © 1998 IEEE.
KSP 제안 키워드
CMOS Technology, CMOS-compatible, Frequency response(FreRes), High Q, Quality-factor(Q-factor), RF IC, RF performance, Rectangular Spiral, Si substrate, Silicon substrate, Silicon technology