ETRI-Knowledge Sharing Plaform

KOREAN
논문 검색
Type SCI
Year ~ Keyword

Detail

Journal Article The Detailed Analysis of High Q CMOS-Compatible Microwave Spiral Inductors in Silicon Technology
Cited 64 time in scopus Download 1 time Share share facebook twitter linkedin kakaostory
Authors
Min Park, Seonghearn Lee, Cheon Soo Kim, Hyun Kyu Yu, Kee Soo Nam
Issue Date
1998-09
Citation
IEEE Transactions on Electron Devices, v.45, no.9, pp.1953-1959
ISSN
0018-9383
Publisher
IEEE
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1109/16.711361
Abstract
We present the extensive experimental results and their detailed analysis showing the important effects of layout parameters on the frequency responses of quality factor (Q) of rectangular spiral inductors, which are fabricated on a silicon substrate by using conventional silicon CMOS technology, in order to determine the desirable values of layout parameters for designing the high Q inductors used in RF IC's applications. Analysis of the inductors on Si substrates with three kinds of resistivities has been performed by tailoring the geometric layout and varying the metal thickness. Using these results, the substrate effects on RF performance of inductors are also investigated by observing the frequency responses of Q with varying the substrate resistivity in detail. © 1998 IEEE.
KSP Keywords
CMOS Technology, CMOS-compatible, Frequency response(FreRes), High Q, Quality-factor(Q-factor), RF IC, RF performance, Rectangular Spiral, Si substrate, Silicon substrate, Silicon technology