BROWSE
Detail
Journal Article
A Fully Integrated 1.9-GHz CMOS Low-Noise Amplifier
Cited 46 time in 
Download 1 time
Share 
Download 1 time
Share
- Authors
- Cheon Soo Kim, Min Park, Chung-Hwan Kim, Yeong Cheol Hyeon, Hyun Kyu Yu, Kwyro Lee, Kee Soo Nam
- Issue Date
- 1998-08
- Citation
- IEEE Microwave and Guided Wave Letters, v.8, no.8, pp.293-295
- ISSN
- 1051-8207
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- A fully integrated 1.9-GHz CMOS low-noise amplifier (LNA) has been implemented in a 0.8-μm CMOS technology. For low-noise performance, the amplifier employs high-quality spiral inductors with a quality factor of 8.5-12.5, and device layout and bias condition of the active devices were optimized for low-noise conditions. This amplifier showed a noise figure of 2.8 dB with a forward gain of 15 dB at current consumption of 15 mA. To the authors' knowledge, this represents the lowest noise figure reported to date for a fully integrated CMOS LNA operating at 1.9 GHz.
- KSP Keywords
- Active devices, CMOS LNA, CMOS Technology, Current consumption, Fully integrated, High-quality, Noise Figure(NF), Noise performance, Quality-factor(Q-factor), device layout, forward gain