상세정보
학술지
A Fully Integrated 1.9-GHz CMOS Low-Noise Amplifier
- 발행일
- 199808
- 출처
- IEEE Microwave and Guided Wave Letters, v.8 no.8, pp.293-295
- ISSN
- 1051-8207
- 출판사
- IEEE
- 초록
- A fully integrated 1.9-GHz CMOS low-noise amplifier (LNA) has been implemented in a 0.8-μm CMOS technology. For low-noise performance, the amplifier employs high-quality spiral inductors with a quality factor of 8.5-12.5, and device layout and bias condition of the active devices were optimized for low-noise conditions. This amplifier showed a noise figure of 2.8 dB with a forward gain of 15 dB at current consumption of 15 mA. To the authors' knowledge, this represents the lowest noise figure reported to date for a fully integrated CMOS LNA operating at 1.9 GHz.
- KSP 제안 키워드
- Active devices, CMOS LNA, CMOS Technology, Current consumption, Fully integrated, High-quality, Noise Figure(NF), Noise performance, Quality-factor(Q-factor), device layout, forward gain