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Journal Article
Planarised Interconnection Technology using a New Pillar Formation Method with Multi-Stacked Metal Structure
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- Issue Date
- 1996-08
- Citation
- Electronics Letters, v.32, no.18, pp.1731-1732
- ISSN
- 1350-911X
- Publisher
- IET
- Language
- English
- Type
- Journal Article
- Abstract
- A multilevel interconnection technology using both a new pillar structure consisting of multi-stacked metal layers and chemical-mechanical polishing planarisation has been proposed. This has several advantages such as self-aligned interconnection and decreased via-pillar resistance. The via-pillar resistance becomes one third of conventional via. In addition this method can improve the planarisation capability of inter-metal dielectrics.
- KSP Keywords
- Chemical Mechanical Polishing(CMP), Multilevel interconnection, Pillar structure, metal layer, metal structure, self-Aligned