상세정보
학술지
Planarised Interconnection Technology using a New Pillar Formation Method with Multi-Stacked Metal Structure
- 발행일
- 199608
- 출처
- Electronics Letters, v.32 no.18, pp.1731-1732
- ISSN
- 1350-911X
- 출판사
- IET
- 초록
- A multilevel interconnection technology using both a new pillar structure consisting of multi-stacked metal layers and chemical-mechanical polishing planarisation has been proposed. This has several advantages such as self-aligned interconnection and decreased via-pillar resistance. The via-pillar resistance becomes one third of conventional via. In addition this method can improve the planarisation capability of inter-metal dielectrics.
- KSP 제안 키워드
- Chemical Mechanical Polishing(CMP), Multilevel interconnection, Pillar structure, metal layer, metal structure, self-Aligned