ETRI-Knowledge Sharing Plaform



논문 검색
구분 SCI
연도 ~ 키워드


학술대회 A 2.4-GHz HBT Power Amplifier Using an On-Chip Transformer as an Output Matching Network
Cited 5 time in scopus Download 0 time Share share facebook twitter linkedin kakaostory
설호석, 박창근, 이동호, 박민, 홍성철
International Microwave Symposium (IMS) 2008, pp.875-878
A power Amplifier operating at 2.4-GHz is implemented using InGaP/GaAs HBT. The output matching network of the power amplifier is implemented on chip using 2:1 transformer. The transformer has less loss and broad frequency bandwidth in comparison with conventional LC output matching networks. Since a differential power cell is used, the power amplifier gets high gain although a sufficient ballast resistor is introduced. The measured input and output return losses are lower than -10 dB from 2.15 to 3-GHz. The center frequency of the small signal gain is 2.4-GHz, and the 1 dB bandwidth is 0.25-GHz. For 2.4-GHz input signal, power added efficiency at 1 dB compressed output power of 28.3 dBm is 40.2%. The small signal gain is 29.8 dB. We can achieve a power and a gain matching in the same frequency range by using transformer as an output matching network. © 2008 IEEE.
KSP 제안 키워드
Ballast resistor, Center frequency, Differential power, Frequency Range, InGaP/GaAs HBT, Input signal, Output matching network, Output power, Power added efficiency(PAE), Return loss(RL), Small signal gain