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Thick Metal CMOS Technology on High Resistivity Substrate for Monolithic 900 MHz and 1.9 GHz CMOS LNAs
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- Authors
- C. S. Kim, M. Park, C. -H. Kim, H. K. Yu, K. Lee, D. Y. Kim, H. Cho
- Issue Date
- 1999-06
- Citation
- International Microwave Symposium (MTT-S) 1999, pp.573-576
- Language
- English
- Type
- Conference Paper
- Abstract
- Thick metal CMOS technology on high resistivity substrate (RF CMOS technology) is demonstrated for the RF IC applications, and we firstly implemented it to the monolithic 900 MHz and 1.9 GHz LNAs. The 1.9 GHz LNA shows a NF of 2.8 dB that is an excellent noise performance compared with the offchip matched CMOS LNAs. And the 900 MHz LNA shows a high gain of 18.8 dB and NF of 3.2 dB. The proposed RF CMOS technology is a very simple process and shows a high reproducibility, and the monolithic LNAs employing the technology show a good and uniform RF performances in a wafer.
- KSP Keywords
- CMOS Technology, High resistivity, Noise performance, RF CMOS, RF IC, high gain, high reproducibility, simple process