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학술지 Low-Temperature Solution-Processed Zinc Oxide Field Effect Transistor by Blending Zinc Hydroxide and Zinc Oxide Nanoparticle in Aqueous Solutions
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저자
신현우, 강찬모, 백규하, 김준영, 도이미, 이창희
발행일
201804
출처
Japanese Journal of Applied Physics, v.57 no.5S, pp.1-5
ISSN
0021-4922
출판사
Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
DOI
https://dx.doi.org/10.7567/JJAP.57.05GD04
협약과제
17HH4900, 광소결 용액공정 배리어 층을 이용한 모바일용 LGP 일체형 QD 시트 개발, 도이미
초록
We present a novel methods of fabricating low-temperature (180 °C), solution-processed zinc oxide (ZnO) transistors using a ZnO precursor that is blended with zinc hydroxide [Zn(OH)2] and zinc oxide hydrate (ZnO쨌H2O) in an ammonium solution. By using the proposed method, we successfully improved the electrical performance of the transistor in terms of the mobility (μ), on/off current ratio (Ion/Ioff), sub-threshold swing (SS), and operational stability. Our new approach to forming a ZnO film was systematically compared with previously proposed methods. An atomic forced microscopic (AFM) image and an X-ray photoelectron spectroscopy (XPS) analysis showed that our method increases the ZnO crystallite size with less OH% impurities. Thus, we attribute the improved electrical performance to the better ZnO film formation using the blending methods.
KSP 제안 키워드
Aqueous solution, Crystallite size, Field-effect transistors(FETs), Low temperature(LT), New approach, ON/OFF current ratio, Operational stability, Oxide field, Solution-processed, X-ray photoelectron spectroscopy (xps), Zinc oxide(ZnO)