ETRI-Knowledge Sharing Plaform

KOREAN
논문 검색
Type SCI
Year ~ Keyword

Detail

Journal Article Low-Temperature Solution-Processed Zinc Oxide Field Effect Transistor by Blending Zinc Hydroxide and Zinc Oxide Nanoparticle in Aqueous Solutions
Cited 5 time in scopus Download 5 time Share share facebook twitter linkedin kakaostory
Authors
신현우, Kang Chan-Mo, Baek Kyu-Ha, 김준영, Do Lee-Mi, 이창희
Issue Date
201804
Source
Japanese Journal of Applied Physics, v.57 no.5S, pp.1-5
ISSN
0021-4922
Publisher
Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
DOI
https://dx.doi.org/10.7567/JJAP.57.05GD04
Project Code
17HH4900, Development of QD sheet integrated on LGP using solution-processed barrier layer by photo-sintering technology for mobile display, Do Lee-Mi
Abstract
We present a novel methods of fabricating low-temperature (180 °C), solution-processed zinc oxide (ZnO) transistors using a ZnO precursor that is blended with zinc hydroxide [Zn(OH)2] and zinc oxide hydrate (ZnO쨌H2O) in an ammonium solution. By using the proposed method, we successfully improved the electrical performance of the transistor in terms of the mobility (μ), on/off current ratio (Ion/Ioff), sub-threshold swing (SS), and operational stability. Our new approach to forming a ZnO film was systematically compared with previously proposed methods. An atomic forced microscopic (AFM) image and an X-ray photoelectron spectroscopy (XPS) analysis showed that our method increases the ZnO crystallite size with less OH% impurities. Thus, we attribute the improved electrical performance to the better ZnO film formation using the blending methods.
KSP Keywords
Aqueous solution, Crystallite size, Field-effect transistors(FETs), Low temperature(LT), New approach, ON/OFF current ratio, Operational stability, Oxide field, Solution-processed, X-ray photoelectron spectroscopy (xps), Zinc oxide(ZnO)