BROWSE
Detail
Journal Article
Low-Temperature Solution-Processed Zinc Oxide Field Effect Transistor by Blending Zinc Hydroxide and Zinc Oxide Nanoparticle in Aqueous Solutions
Cited 5 time in 
Share 
Share
- Authors
- Hyeonwoo Shin, Chan-mo Kang, Kyu-Ha Baek, Jun Young Kim, Lee-Mi Do, Changhee Lee
- Issue Date
- 2018-04
- Citation
- Japanese Journal of Applied Physics, v.57, no.5S, pp.1-5
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- We present a novel methods of fabricating low-temperature (180 °C), solution-processed zinc oxide (ZnO) transistors using a ZnO precursor that is blended with zinc hydroxide [Zn(OH)2] and zinc oxide hydrate (ZnO쨌H2O) in an ammonium solution. By using the proposed method, we successfully improved the electrical performance of the transistor in terms of the mobility (μ), on/off current ratio (Ion/Ioff), sub-threshold swing (SS), and operational stability. Our new approach to forming a ZnO film was systematically compared with previously proposed methods. An atomic forced microscopic (AFM) image and an X-ray photoelectron spectroscopy (XPS) analysis showed that our method increases the ZnO crystallite size with less OH% impurities. Thus, we attribute the improved electrical performance to the better ZnO film formation using the blending methods.
- KSP Keywords
- Aqueous solution, Crystallite size, Electrical performance, Field Effect Transistor(FET), New approach, Oxide field, Solution-processed, X-ray photoelectron spectroscopy (xps), Zinc Oxide(ZnO), Zinc oxide nanoparticle, ZnO films