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Journal Article Low-Temperature Solution-Processed Zinc Oxide Field Effect Transistor by Blending Zinc Hydroxide and Zinc Oxide Nanoparticle in Aqueous Solutions
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신현우, Kang Chan-Mo, Baek Kyu-Ha, 김준영, Do Lee-Mi, 이창희
Issue Date
Japanese Journal of Applied Physics, v.57 no.5S, pp.1-5
Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
Project Code
17HH4900, Development of QD sheet integrated on LGP using solution-processed barrier layer by photo-sintering technology for mobile display, Do Lee-Mi
We present a novel methods of fabricating low-temperature (180 °C), solution-processed zinc oxide (ZnO) transistors using a ZnO precursor that is blended with zinc hydroxide [Zn(OH)2] and zinc oxide hydrate (ZnO쨌H2O) in an ammonium solution. By using the proposed method, we successfully improved the electrical performance of the transistor in terms of the mobility (μ), on/off current ratio (Ion/Ioff), sub-threshold swing (SS), and operational stability. Our new approach to forming a ZnO film was systematically compared with previously proposed methods. An atomic forced microscopic (AFM) image and an X-ray photoelectron spectroscopy (XPS) analysis showed that our method increases the ZnO crystallite size with less OH% impurities. Thus, we attribute the improved electrical performance to the better ZnO film formation using the blending methods.
KSP Keywords
Aqueous solution, Crystallite size, Field-effect transistors(FETs), Low temperature(LT), New approach, ON/OFF current ratio, Operational stability, Oxide field, Solution-processed, X-ray photoelectron spectroscopy (xps), Zinc oxide(ZnO)