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Journal Article Enhanced Sulfurization Reaction of Molybdenum using a Thermal Cracker for Forming Two-Dimensional MoS2 Layers
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Authors
Dae-Hyung Cho, Woo-Jung Lee, Jae-Hyung Wi, Won Seok Han, Sun Jin Yun, Byungha Shin, Yong-Duck Chung
Issue Date
2018-05
Citation
Physical Chemistry Chemical Physics, v.20, no.23, pp.16193-16201
ISSN
1463-9076
Publisher
Royal Society of Chemistry (RSC)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1039/c8cp02390e
Abstract
We propose a method to fabricate two-dimensional (2D) molybdenum disulfide (MoS2) layers to overcome issues in typical fabrication processes by promoting the sulfurization reaction of molybdenum (Mo). A thin sputtered-Mo layer was sulfurized using a sulfur (S) thermal cracker to form 2D MoS2 layers. The effects of key process parameters such as cracking-zone temperature (TC-zone), thickness of the sputtered-Mo layer, and Ar pressure during deposition of the Mo layer were systematically investigated. The degree of thermal treatment of evaporated S vapor is controlled by varying TC-zone. The higher TC-zone enabled easy formation of thin MoS2 layers at a low substrate temperature of 250 °C due to the greatly enhanced sulfurization reaction. The thickness of the final MoS2 layers was controlled by changing the initial thickness of the sputtered-Mo film. Ultra-thin MoS2 film about 2-layers-thick was obtained by sulfurizing a 2 횇-thick Mo film. The chemical state of the MoS2 layers largely depended on the Ar pressure during the sputtering process of the initial Mo. Lower Ar pressure enhanced MoS2 formation due to more efficient substitution of the MoS2 phase for the MoO3 phase. By using the S thermal cracker, we demonstrate a method to easily fabricate 2D MoS2 layers, excluding some problematic issues such as toxic and expensive reactants, non-vacuum conditions susceptible to contamination, and high substrate temperature.
KSP Keywords
Ar pressure, Chemical states, Fabrication process, Form 2D, High substrate temperature, Key process, Low substrate temperature, Non-vacuum, Process Parameters, Thermal treatments, Vacuum condition