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CVD 다이아몬드 기판에 형성된 AlGaN/GaN 이종 구조위의 쇼키 다이오드의 열 특성
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- Issue Date
- 2018-06
- Citation
- 대한전자공학회 학술 대회 (하계) 2018, pp.195-198
- Publisher
- 대한전자공학회
- Language
- Korean
- Type
- Conference Paper
- Abstract
- High electron mobility transistors (HEMTs) and Schottky barrier diodes (SBDs) based on AlGaN/GaN heterostructures are well studied for application for high-frequency and/or high-power area. Widely distributed substrates for the high performance of RF applications are presently AlGaN/GaN on SiC and AlGaN/GaN on Si for high power performance. Because the thermal conductivity of CVD diamond substrate is high as 12 W/cm∙K, devices of AlGaN/GaN on CVD diamond are one of the excellent alternatives for power and RF applications, where the thermal conductivity of AlGaN/GaN on SiC is 4.9 W/cm∙K, and that of AlGaN/GaN on Si 1.3 W/cm∙K. In this work, we report the fabrication of SBD devices with 163.8 mm Schottky length. And also we investigated the thermal properties of the fabricated large scale SBD devices.
- KSP Keywords
- AlGaN/GaN heterostructure, AlGaN/GaN-on-Si, Cvd diamond, GaN on SiC, High Frequency(HF), High electron mobility transistor(HEMT), High performance, RF applications, diamond substrate, high power performance, large-scale