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The Effect of Aluminum in the Oxide Thin-Film Transistor
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- 발행일
- 201806
- 출처
- European Materials Research Society (E-MRS) Meeting 2018 (Spring), pp.1-1
- 초록
- Described herein is the role of hydrogen in aluminum oxide (Al2O3) gate dielectrics in amorphous indium?gallium?zinc oxide (a-InGaZnO or a-IGZO) thin-film transistors (TFTs). Compared to a-IGZO TFTs with a low-temperature (150°C) Al2O3 gate dielectric, a-IGZO devices with a high-temperature (250?300°C) Al2O3 gate dielectric exhibit poor transistor characteristics, such as low mobility, a high subthreshold slope, and huge hysteresis. Through DC and short-pulsed current?voltage (I?V) measurements, it was revealed that the degradation of the transistor performance stems from the charging and discharging phenomenon at the interface traps located in the interface between the a-IGZO semiconductor and the Al2O3 gate insulator. It was found that the low-temperature Al2O3 atomic layer deposition processed film contains a higher density of hydrogen atoms compared to high-deposition-temperature films. The study results show that a high concentration of hydrogen atoms can passivate the defect sites in the interface and bulk, which produces excellent transistor characteristics. This study demonstrated that hydrogen has a beneficial effect on the defect passivation for oxide TFTs.
- KSP 제안 키워드
- Atomic Layer Deposition, Defect passivation, Gate insulator, High Temperature, High concentration, Hydrogen atoms, IGZO semiconductor, Low mobility, Low temperature(LT), Oxide TFTs, Short-pulsed