상세정보
학술지
Investigation of the Evolution of Nitrogen Defects in Flash-Lamp-Annealed InGaZnO Films and Their Effects on Transistor Characteristics
- 저자
- 엄태일, 안치홍, 강준구, Muhammad Saad Salman, 이선영, 김영훈, 이후정, 강찬모, 강치원
- 발행일
- 201805
- 출처
- Applied Physics Express, v.11 no.6, pp.1-4
- ISSN
- 1882-0778
- 출판사
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- 협약과제
- 17PH3500, 인쇄 공정을 이용한 40인치 이상의 디지털 사이니지 디스플레이용 TFT array 개발, 백규하
- 초록
- In this study, we show the evolution of nitrogen defects during a sol-gel reaction in flash-lamp-annealed InGaZnO (IGZO) films and their effects on the device characteristics of their thin-film transistors (TFTs). The flash lamp annealing (FLA) of the IGZO TFT for 16 s helps achieve a mobility of approximately 7 cm2V-1 s-1. However, further extension of the annealing time results only in drastic increases in carrier concentration and offcurrent. The X-ray photoelectron spectroscopy (XPS) analysis of the N 1s peak unravels the presence of oxygen-vacancy-associated nitrogen defects and their evolution with annealing time, which is possibly responsible for the increase in carrier concentration.
- KSP 제안 키워드
- Annealing time, Carrier concentration, Device characteristics, First Stokes(S1), Flash lamp annealing(FLA), IGZO TFTs, Nitrogen defects, Thin-Film Transistor(TFT), Transistor characteristics, X-ray photoelectron spectroscopy (xps), sol-gel reaction