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Journal Article
Investigation of the Evolution of Nitrogen Defects in Flash-Lamp-Annealed InGaZnO Films and Their Effects on Transistor Characteristics
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- Authors
- Tae-Yil Eom, Chee-Hong Ahn, Jun-Gu Kang, Muhammad Saad Salman, Sun-Young Lee, Yong-Hoon Kim, Hoo-Jeong Lee, Chan-Mo Kang, Chiwon Kang
- Issue Date
- 2018-05
- Citation
- Applied Physics Express, v.11, no.6, pp.1-4
- ISSN
- 1882-0778
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- In this study, we show the evolution of nitrogen defects during a sol-gel reaction in flash-lamp-annealed InGaZnO (IGZO) films and their effects on the device characteristics of their thin-film transistors (TFTs). The flash lamp annealing (FLA) of the IGZO TFT for 16 s helps achieve a mobility of approximately 7 cm2V-1 s-1. However, further extension of the annealing time results only in drastic increases in carrier concentration and offcurrent. The X-ray photoelectron spectroscopy (XPS) analysis of the N 1s peak unravels the presence of oxygen-vacancy-associated nitrogen defects and their evolution with annealing time, which is possibly responsible for the increase in carrier concentration.