상세정보
학술지
Metal-Agglomeration-Suppressed Growth of MoS2 and MoSe2 Films with Small Sulfur and Selenium Molecules for High Mobility Field Effect Transistor Applications
- 발행일
- 201808
- 출처
- Nanoscale, v.10 no.32, pp.15213-15221
- ISSN
- 2040-3364
- 출판사
- Royal Society of Chemistry (RSC)
- 협약과제
- 17HB1300, 차세대 신기능 스마트디바이스 플랫폼을 위한 대면적 이차원소재 및 소자 원천기술 개발, 윤선진
- 초록
- This work reports a breakthrough technique for achieving high quality and uniform molybdenum dichalcogenide (MoX2 where X = S, Se) films on large-area wafers via metal-agglomeration-suppressed growth (MASG) with small chalcogen (X-) molecules at growth temperatures (TG) of 600 °C or lower. In order to grow MoS2 films suitable for field effect transistors (FETs), S-molecules should be pre-deposited on Mo films at 60 °C prior to heating the substrate up to TG. The pre-deposited S-molecules successfully suppressed the agglomeration of Mo during sulfurization and prevented the formation of protruding islands in the resultant sulfide films. The small X-molecules supplied from a thermal cracker reacted with Mo-precursor film to form MoX2. The film quality strongly depends on the temperatures of cracking and reservoir zones, as well as TG. The MoS2 film grown at 570 °C showed a thickness variation of less than 3.3% on a 6 inch-wafer. The mobility and on/off current ratio of 6.1 nm-MoS2 FET at TG = 570 °C were 59.8 cm2 V-1 s-1 and 105, respectively. The most significant advantages of the MASG method proposed in this work are its expandability to various metal dichalcogenides on larger substrates as well as a lower TG enabled by using reactive small molecules supplied from a cracker, for which temperature is independently controlled.
- KSP 제안 키워드
- Field effect transistors(Substrate temperature), Field-effect transistors(FETs), First Stokes(S1), High Mobility, Mo films, Molybdenum dichalcogenide, ON/OFF current ratio, Precursor film, Sulfide films, Thickness variation, film quality