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Journal Article Generation and Detection of Terahertz Waves Using Low- Temperature-Grown GaAs with an Annealing Process
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Authors
Kiwon Moon, Jeongyong Choi, Jun Hwan Shin, Sang Pil Han, Hyunsung Ko, Namje Kim, Jeong Woo Park, Young Jong Yoon, Kwang Yong Kang, Han Cheol Ryu, Kyung Hyun Park
Issue Date
2014-02
Citation
ETRI Journal, v.36, no.1, pp.159-162
ISSN
1225-6463
Publisher
한국전자통신연구원 (ETRI)
Language
English
Type
Journal Article
Project Code
12SF1400, Development of the terahertz wireless interconnection technology based on photonics integrated circuits, Park Kyung Hyun
Abstract
In this letter, we present low-temperature grown GaAs (LTGGaAs)-based photoconductive antennas for the generation anddetection of terahertz (THz) waves. The growth of LTG-GaAsand the annealing temperatures are systematically discussedbased on the material characteristics and the properties of THzemission and detection. The optimum annealing temperaturedepends on the growth temperature, which turns out to be540¡ÆC to 580¡ÆC for the initial excess arsenic density of2¡¿1019/cm3 to 8¡¿1019/cm3.
KSP Keywords
Annealing temperature, Low temperature(LT), Material characteristics, annealing process, growth temperature, low-temperature grown GaAs, terahertz waves
This work is distributed under the term of Korea Open Government License (KOGL)
(Type 4: : Type 1 + Commercial Use Prohibition+Change Prohibition)
Type 4: