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학술지 Asymmetric Double QW Superluminescent Diodes for Broadband and High-power Use
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저자
권오기, 이철욱
발행일
201802
출처
Microwave and Optical Technology Letters, v.60 no.2, pp.494-498
ISSN
0895-2477
출판사
John Wiley & Sons
DOI
https://dx.doi.org/10.1002/mop.30999
협약과제
17HB1600, 초고속 통신 및 영상 신호처리를 위한 광/THz 원천기술 연구개발, 송민협
초록
We report the use of broadband and high-power InGaAs/GaAs asymmetric double quantum-well (ADQW) superluminescent diodes (SLDs), which consist of a tilted, bent, and straight waveguide. To examine the effects of the arrangement of the ADQW and the gain provided by a straight waveguide on the output performances, we fabricated SLDs with different lengths for two types of ADQW, that is, a wide QW at the p-side for Sample 1, and a narrow QW at the p-side for Sample 2, and tested their spectral width and output power. The fabricated SLDs with a straight length (L3) of 80 μm show ?닋3 dB spectral widths of 122 and 116 nm and output powers of 20 and 16 mW at an injection current of 250 mA for Samples 1 and 2, respectively. For both samples, it appears that, as the L3 increases, the spectral width decreases and the output power increases. From this result, we confirmed that both the spectral width and the output power can be adjusted and optimized at a given structure for various applications.
키워드
asymmetric multiple quantum well, broad gain, lateral current spreading, ridge waveguide laser diode
KSP 제안 키워드
16 nm, High power, Injection current, Laser diode(LD), Multiple-quantum-well(MQW), Output power, Quantum Well(QW), Ridge waveguides(RWs), Superluminescent diodes(SLDs), lateral current spreading, output performance