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학술지 High mobility Ultra-thin Crystalline Indium Oxide Thin Film Transistor Using Atomic Layer Deposition
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저자
이종찬, 강승열, 문제현, 피재은, 안성덕, 오힘찬, 권광호
발행일
201809
출처
Applied Physics Letters, v.113 no.11, pp.1-5
ISSN
0003-6951
출판사
American Institute of Physics (AIP)
DOI
https://dx.doi.org/10.1063/1.5041029
협약과제
18HB1100, 차세대 신기능 스마트디바이스 플랫폼을 위한 대면적 이차원소재 및 소자 원천기술 개발, 윤선진
초록
Stoichiometric crystalline binary metal oxide thin films can be used as channel materials for transparent thin film transistors. However, the nature of the process used to fabricate these films causes most binary metal oxide thin films to be highly conductive, making them unsuitable for channel materials. We overcame this hurdle by forming stoichiometric ultra-thin (5 nm) crystalline In2O3 films by using a thermal atomic layer deposition method. Specifically, (3-(dimethylamino)propyl)dimethylindium was used as a liquid precursor and ozone as an oxygen source to grow In2O3 thin films at a high growth rate of 0.06 nm/cycle. Adjustment of the deposition processing temperature followed by annealing in an oxygen atmosphere enabled us to fully crystallize the film into a cubic bixbyite structure with the retained stoichiometry. The transparent crystalline ultra-thin In2O3-based bottom-gate thin film transistors showed excellent and statistically uniform switching characteristics such as a high Ion/Ioff ratio exceeding 107, a high linear mobility of 41.8 cm2/V s, a small subthreshold swing of 100 mV/dec, and a low hysteresis of 0.05 V. Our approach offers a straightforward scheme, which is compatible with oxide electronics, for fabricating a transparent metal oxide device without resorting to complicated oxide compositional strategies.
KSP 제안 키워드
5 nm, Atomic layer deposition method, Bottom gate, High Mobility, Liquid precursor, Low hysteresis, Metal oxide thin films, Metal-oxide(MOX), Oxygen atmosphere, Processing temperature, Thermal atomic layer deposition