상세정보
학술지
Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure
- 발행일
- 201806
- 출처
- Applied Sciences, v.8 no.6, pp.1-14
- ISSN
- 2076-3417
- 출판사
- MDPI AG
- 협약과제
- 17DB1800, GaN RF 전력증폭 소자 설계 개발, 임종원
- 초록
- In this study, a high-performance AlGaN/GaN high electron mobility transistor (HEMT) is presented to improve its electrical operation by employing an inner field-plate (IFP) structure. Prior to the IFP structure analysis, we compared the measured and simulated direct current characteristics of the fabricated two-finger conventional T-shaped gate HEMTs. Then, the AlGaN/GaN HEMT with a drain-side field plate (FP) structure was suggested to enhance the breakdown voltage characteristics. The maximum breakdown voltage recorded with a 0.8 μm stretched FP structure was 669 V. Finally, the IFP structure was interfaced with the gate head of the device to compensate the radio frequency characteristics, choosing the optimum length of the drain-side FP structure. Compared to the 0.8 μm stretched FP structure, the IFP structure showed improved frequency characteristics with minimal difference to the breakdown voltage. The frequency variation caused by changing the passivation thickness was also analyzed, and the optimum thickness was identified. Thus, IFP AlGaN/GaN HEMT is a promising candidate for high-power and high-frequency applications.
- KSP 제안 키워드
- AlGaN/GaN HEMTs, Breakdown voltage(BDV), Direct current(DC), Direct current characteristics, Field Plate, High Frequency(HF), High electron mobility transistor(HEMT), High performance, High power, High-frequency applications, Optimum length
본 저작물은 크리에이티브 커먼즈 저작자 표시 (CC BY) 조건에 따라 이용할 수 있습니다.
