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학술대회 28 GHz 1.8 dB Insertion Loss SPDT Switch with 24 dB Isolation in 65 nm CMOS
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저자
장승현, 공선우, 이희동, 박지훈, 김광선, 이광천
발행일
201809
출처
European Microwave Conference (EuMC) 2018, pp.835-838
DOI
https://dx.doi.org/10.23919/EuMC.2018.8541696
협약과제
18HF1500, 5G 이동통신용 밀리미터파(40GHz 이하) 빔포밍 부품 개발, 김광선
초록
28 GHz SPDT switch has been designed and fabricated in 65 nm CMOS with deep N-well as a building block for beamforming-based 5 th generation mobile communication systems. The measured insertion loss is 1.8 dB at 28 GHz, and IIP3 is measured as 11.75 dBm. The input and output return losses are < -14mathrm{dB} and < -15mathrm{dB}, respectively.
키워드
28 GHz, 5G mobile communication, beamforming, phased array, SPDT, switch
KSP 제안 키워드
28 GHz, 5G mobile communication, 65nm CMOS, Building block, Deep N-well, Return loss(RL), SPDT Switch, input and output, insertion loss, mobile communication system, phased array