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28 GHz 1.8 dB Insertion Loss SPDT Switch with 24 dB Isolation in 65 nm CMOS
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- Issue Date
- 2018-09
- Citation
- European Microwave Conference (EuMC) 2018, pp.835-838
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- 28 GHz SPDT switch has been designed and fabricated in 65 nm CMOS with deep N-well as a building block for beamforming-based 5 th generation mobile communication systems. The measured insertion loss is 1.8 dB at 28 GHz, and IIP3 is measured as 11.75 dBm. The input and output return losses are < -14mathrm{dB} and < -15mathrm{dB}, respectively.
- KSP Keywords
- 28 GHz, 65nm CMOS, Deep N-well, Input-Output, Mobile communication systems, Return Loss, SPDT Switch, building block, insertion loss