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Conference Paper Thermal Analysis of SiC Power Semiconductor with Copper Clip Bonding and Copper Sintering Paste
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Authors
In-Hoo Kim, Ae-Sun Oh, Seok-Hwan Moon, Yong-Sung Eom, Keon-Soo Jang, Kwang-Seong Choi, Hyun-Cheol Bae
Issue Date
2018-10
Citation
International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT) 2018, pp.1-4
Language
English
Type
Conference Paper
Abstract
As a development stage of the existing silicon-based power semiconductor technology has matured, the theoretical performance has reached its limit. As a result, wide bandgap devices with superior electrical, thermal and mechanical properties are emerging as an alternative. However, wide bandgap semiconductors also have problems in device reliability due to the increase in the amount of heat generated to increase performance. Therefore, in order to prevent a device from deteriorating, an effective heat dissipation design considering the maximum temperature is required. Thus, in this study, a structure with excellent heat stability and heat dissipation characteristics was designed and numerical analysis was conducted. Through this, we proposed heat dissipation guidelines of SiC power semiconductors.
KSP Keywords
Clip bonding, Development stage, Device reliability, Heat dissipation, Heat stability, Maximum temperature, Mechanical properties(PMCs), Numerical analysis, Power semiconductor, Semiconductor technology, Silicon-based