BROWSE
Detail
Conference Paper
Thermal Analysis of SiC Power Semiconductor with Copper Clip Bonding and Copper Sintering Paste
Cited - time in 
Share 
Share
- Authors
- In-Hoo Kim, Ae-Sun Oh, Seok-Hwan Moon, Yong-Sung Eom, Keon-Soo Jang, Kwang-Seong Choi, Hyun-Cheol Bae
- Issue Date
- 2018-10
- Citation
- International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT) 2018, pp.1-4
- Language
- English
- Type
- Conference Paper
- Abstract
- As a development stage of the existing silicon-based power semiconductor technology has matured, the theoretical performance has reached its limit. As a result, wide bandgap devices with superior electrical, thermal and mechanical properties are emerging as an alternative. However, wide bandgap semiconductors also have problems in device reliability due to the increase in the amount of heat generated to increase performance. Therefore, in order to prevent a device from deteriorating, an effective heat dissipation design considering the maximum temperature is required. Thus, in this study, a structure with excellent heat stability and heat dissipation characteristics was designed and numerical analysis was conducted. Through this, we proposed heat dissipation guidelines of SiC power semiconductors.
- KSP Keywords
- Clip bonding, Development stage, Device reliability, Heat dissipation, Heat stability, Maximum temperature, Mechanical properties(PMCs), Numerical analysis, Power semiconductor, Semiconductor technology, Silicon-based