ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 Stretchable Active Matrix of Oxide Thin-film Transistors with Monolithic Liquid Metal Interconnects
Cited 14 time in scopus Download 8 time Share share facebook twitter linkedin kakaostory
저자
박찬우, 구재본, 황치선, 박홍근, 임성갑, 이승윤
발행일
201812
출처
Applied Physics Express, v.11 no.12, pp.1-4
ISSN
1882-0778
출판사
Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
DOI
https://dx.doi.org/10.7567/APEX.11.126501
협약과제
18HB1300, Skintronics를 위한 감각 입출력 패널 핵심 기술 개발, 이정익
초록
We demonstrate a new process scheme for fabricating stretchable active matrices of oxide thin-film transistors (TFTs), where TFTs and cross points of two metal layers on stiff islands are monolithically integrated with gallium-based liquid metal interconnects within an elastomeric matrix. As the liquid metal interconnects are formed by a photolithography-based technique compatible with conventional flexible circuit technology, this approach can provide high integration density and mechanical durability as required in stretchable displays or electronic skins. We have fabricated a 4 × 4 active matrix of oxide TFTs within a 20 × 20 mm2 area, which provides stable operation up to 40% of stretching.
KSP 제안 키워드
Flexible circuits, Liquid metal, Mechanical durability, Metal interconnects, Oxide TFTs, Process scheme, Stable operation, Thin-Film Transistor(TFT), active matrix, electronic skins, integration density