BROWSE
Detail
Journal Article
Stretchable Active Matrix of Oxide Thin-film Transistors with Monolithic Liquid Metal Interconnects
Cited 20 time in 
Share 
Share
- Authors
- Chan Woo Park, Jae Bon Koo, Chi-Sun Hwang, Hongkeun Park, Sung Gap Im, Seung-Yun Lee
- Issue Date
- 2018-12
- Citation
- Applied Physics Express, v.11, no.12, pp.1-4
- ISSN
- 1882-0778
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- We demonstrate a new process scheme for fabricating stretchable active matrices of oxide thin-film transistors (TFTs), where TFTs and cross points of two metal layers on stiff islands are monolithically integrated with gallium-based liquid metal interconnects within an elastomeric matrix. As the liquid metal interconnects are formed by a photolithography-based technique compatible with conventional flexible circuit technology, this approach can provide high integration density and mechanical durability as required in stretchable displays or electronic skins. We have fabricated a 4 × 4 active matrix of oxide TFTs within a 20 × 20 mm2 area, which provides stable operation up to 40% of stretching.
- KSP Keywords
- Flexible circuits, Liquid metal, Mechanical durability, Metal interconnects, Oxide TFTs, Process scheme, Stable operation, Thin-Film Transistor(TFT), active matrix, electronic skins, integration density