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Journal Article Device Characteristics of Top-Emitting Organic Light-Emitting Diodes Depending on Anode Materials for CMOS-Based OLED Microdisplays
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Authors
Hyunkoo Lee, Hyunsu Cho, Chun-Won Byun, Chan-Mo Kang, Jun-Han Han, Jeong-Ik Lee, Hokwon Kim, Jeong Hwan Lee, Minseok Kim, Nam Sung Cho
Issue Date
2018-12
Citation
IEEE Photonics Journal, v.10, no.6, pp.1-9
ISSN
1943-0655
Publisher
IEEE
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1109/JPHOT.2018.2877196
Abstract
We investigated the optical reflectance, surface roughness, and sheet resistance of aluminum (Al)/titanium nitride (TiN), titanium (Ti), and tungsten (W) layers on Si substrates, which are available in the CMOS foundry, for organic light-emitting diode (OLED) microdisplays. The devices with different metal anode layers exhibited different hole-injection properties and OLED performances, owing to the different optical and electrical properties of metal anode layers. Based on the OLED characteristics, the Al/TiN layer was selected as an anode layer for OLED microdisplays. A green monochromatic OLED microdisplay panel was designed and implemented using the 0.11-μm CMOS process. The density of pixels was ~2 351 pixels per inch and the panel's active area was 0.7 in in diagonal. The resolution of the panel was 1 280 × 3 × 1 024, corresponding to SXGA. The panel was successfully operated, and the maximal luminance was ~460 cd/m2.
KSP Keywords
Active area, CMOS Process, Device characteristics, Metal anode, Optical and electrical properties, Optical reflectance, Si substrate, Surface roughness, TiN layer, Titanium Nitride, anode materials
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CC BY NC ND