상세정보
학술지
Device Characteristics of Top-Emitting Organic Light-Emitting Diodes Depending on Anode Materials for CMOS-Based OLED Microdisplays
- 발행일
- 201812
- 출처
- IEEE Photonics Journal, v.10 no.6, pp.1-9
- ISSN
- 1943-0655
- 출판사
- IEEE
- 초록
- We investigated the optical reflectance, surface roughness, and sheet resistance of aluminum (Al)/titanium nitride (TiN), titanium (Ti), and tungsten (W) layers on Si substrates, which are available in the CMOS foundry, for organic light-emitting diode (OLED) microdisplays. The devices with different metal anode layers exhibited different hole-injection properties and OLED performances, owing to the different optical and electrical properties of metal anode layers. Based on the OLED characteristics, the Al/TiN layer was selected as an anode layer for OLED microdisplays. A green monochromatic OLED microdisplay panel was designed and implemented using the 0.11-μm CMOS process. The density of pixels was ~2 351 pixels per inch and the panel's active area was 0.7 in in diagonal. The resolution of the panel was 1 280 × 3 × 1 024, corresponding to SXGA. The panel was successfully operated, and the maximal luminance was ~460 cd/m2.
- KSP 제안 키워드
- Active area, CMOS Process, Device characteristics, Metal anode, Optical Reflectance, Optical and electrical properties, Organic light-emitting diodes(OLEDS), Si substrate, Surface roughness, TiN layer, Titanium Nitride