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Journal Article
Device Characteristics of Top-Emitting Organic Light-Emitting Diodes Depending on Anode Materials for CMOS-Based OLED Microdisplays
- Authors
- Hyunkoo Lee, Hyunsu Cho, Chun-Won Byun, Chan-Mo Kang, Jun-Han Han, Jeong-Ik Lee, Hokwon Kim, Jeong Hwan Lee, Minseok Kim, Nam Sung Cho
- Issue Date
- 2018-12
- Citation
- IEEE Photonics Journal, v.10, no.6, pp.1-9
- ISSN
- 1943-0655
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- We investigated the optical reflectance, surface roughness, and sheet resistance of aluminum (Al)/titanium nitride (TiN), titanium (Ti), and tungsten (W) layers on Si substrates, which are available in the CMOS foundry, for organic light-emitting diode (OLED) microdisplays. The devices with different metal anode layers exhibited different hole-injection properties and OLED performances, owing to the different optical and electrical properties of metal anode layers. Based on the OLED characteristics, the Al/TiN layer was selected as an anode layer for OLED microdisplays. A green monochromatic OLED microdisplay panel was designed and implemented using the 0.11-μm CMOS process. The density of pixels was ~2 351 pixels per inch and the panel's active area was 0.7 in in diagonal. The resolution of the panel was 1 280 × 3 × 1 024, corresponding to SXGA. The panel was successfully operated, and the maximal luminance was ~460 cd/m2.
- KSP Keywords
- Active area, CMOS Process, Device characteristics, Metal anode, Optical and electrical properties, Optical reflectance, Si substrate, Surface roughness, TiN layer, Titanium Nitride, anode materials
This work is distributed under the term of Creative Commons License (CCL)
(CC BY NC ND)
(CC BY NC ND)
