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학술대회
2단계 게이트 리세스 방법으로 제작한 100nm mHEMT소자의 DC/RF 특성
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- 발행일
- 201811
- 출처
- 한국전자파학회 학술 대회 (추계) 2018, pp.106-106
- 협약과제
- 18DB1800, W-대역 탐지용 송수신기 집적화 기술을 위한 W-대역 MMIC Chip 및 공정개발, 강동민
- 초록
- A 100-nm gate-length metamorphic high electron mobility transistor(mHEMT) with a T-shaped gate was fabricated using a two-step gate recess and characterized for DC and microwave performance. The mHEMT device exhibited DC output characteristics having drain current(Idss), an extrinsic transconductance(gm) of 1,090 mS/mm and a threshold voltage(Vth) of ?0.65 V. The fT and fmax obtained for the 100-nm mHEMT device were 190 and 260 GHz, respectively. The developed mHEMT will be applied in fabricating W-band monolithic microwave integrated circuits(MMICs).
- KSP 제안 키워드
- 60 GHz, DC output, Drain current, Gate recess, High electron mobility transistor(HEMT), Microwave monolithic integrated circuits(MMIC), T-shaped gate, Two-Step, W-band, metamorphic high electron mobility transistor(mHEMT), microwave integrated circuit