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Journal Article Improvement in Cyclic Operation of Unit Pixel Device using Sb-excess Ge2Sb2Te5 Thin Films for Hologram Image Implementation
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Authors
Han-Byeol Kang, Yong-Hae Kim, Tae-Youb Kim, Seong-M. Cho, Sanghoon Cheon, Chi-Young Hwang, Chi-Sun Hwang, Sung-Min Yoon
Issue Date
2018-07
Citation
Japanese Journal of Applied Physics, v.57, no.8, pp.1-6
ISSN
0021-4922
Publisher
Japan Society of Applied Physics (JSAP)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.7567/JJAP.57.082201
Abstract
The effects of the atomic composition of Ge2Sb2Te5 (GST), especially the Sb-excess phase, on device reliability were investigated for applications of spatial light modulator (SLM) devices using phase-change materials. Sb-excess GST phases were prepared by cosputtering with two target systems. For Sb-excess GST thin films, amorphous phases were found to be more directly crystallized to more conductive hexagonal-closepacking phases at higher crystallization temperatures without the appearance of a less conductive face-centered-cubic phase with increasing amount of incorporated Sb. The marked changes in crystallization behavior and improved thermal stability were suggested as critical benefits for enhancing the device durability during cyclic operations, considering that the interdiffusion within the GST could be the main origin of the final device failure. The number of cyclic operations of the unit pixel device was markedly improved to more than 103 when the amount of excess Sb was modulated from 0 to 21 at. %.
KSP Keywords
Amorphous Phase, Atomic composition, Crystallization behavior, Cubic phases, Cyclic operation, Device failure, Device reliability, GST thin films, Phase Change Material(PCM), Spatial light modulator(SLM), crystallization temperature