상세정보
학술대회
Transparent Triple-layer Oxide TFT for Enhanced Photo Switching Characteristics
- 발행일
- 201807
- 출처
- International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) 2018, pp.1-3
- 협약과제
- 18HB1100, 차세대 신기능 스마트디바이스 플랫폼을 위한 대면적 이차원소재 및 소자 원천기술 개발, 윤선진
- 초록
- We studied transparent thin film transistors with a triple-layer channel structure of aluminium-doped indium zinc tin oxide (Al-IZTO) / indium zinc oxide (IZO) / Al-IZTO to suppress the persistent photoconductivity (PPC). The TFT was fabricated top-gate, bottom-contact structure. The characteristics of Al-IZTO triple-layer exhibited high mobility (μ sat) of3 2 cm2/Vs, Vth of -4V, and sub-threshold swing of 260 mV/dec. We applied a positive gate pulse to Al-IZTO triple-layer TFT and the PPC was shrunk in a short time span of 55 ms with 10 μs gate pulse. Our TFT scheme can be readily applied as photo TFTs where stable operation and electrical manipulations of PPC are desired.
- KSP 제안 키워드
- Bottom contact, Channel structure, Contact structure, Gate pulse, High Mobility, Indium zinc oxide, Indium zinc tin oxide(IZTO), Oxide TFTs, Persistent photoconductivity (ppc), Short time, Stable operation