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Conference Paper
Transparent Triple-layer Oxide TFT for Enhanced Photo Switching Characteristics
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- Authors
- Jongchan Lee, Jaehyun Moon, Jae-Eun Pi, Sung Haeng Cho, Hee-Ok Kim, Himchan Oh, Chi-Sun Hwang, Seong-Deok Ahn, Seung-Youl Kang, Kwang-Ho Kwon
- Issue Date
- 2018-07
- Citation
- International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) 2018, pp.1-3
- Language
- English
- Type
- Conference Paper
- Abstract
- We studied transparent thin film transistors with a triple-layer channel structure of aluminium-doped indium zinc tin oxide (Al-IZTO) / indium zinc oxide (IZO) / Al-IZTO to suppress the persistent photoconductivity (PPC). The TFT was fabricated top-gate, bottom-contact structure. The characteristics of Al-IZTO triple-layer exhibited high mobility (μ sat) of3 2 cm2/Vs, Vth of -4V, and sub-threshold swing of 260 mV/dec. We applied a positive gate pulse to Al-IZTO triple-layer TFT and the PPC was shrunk in a short time span of 55 ms with 10 μs gate pulse. Our TFT scheme can be readily applied as photo TFTs where stable operation and electrical manipulations of PPC are desired.
- KSP Keywords
- Bottom contact, Channel structure, Contact structure, Gate pulse, High Mobility, Indium zinc oxide, Indium zinc tin oxide(IZTO), Oxide TFTs, Persistent photoconductivity (ppc), Short time, Stable operation