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Conference Paper Fabrication and Characteristics of GaN HEMT on SiC Device with Internal Backside Via-hole in Active Region for MMIC Applications
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Authors
Byoung-Gue Min, Kyu-Jun Cho, Jong Min Lee, Seong-Il Kim, Hyung Sup Yoon, Haecheon Kim, Ho-Kyun Ahn, Hyun-Wook Jung, Sung-Jae Chang, Jae-Won Do, Min Jeong Shin, Jong-Won Lim
Issue Date
2018-02
Citation
한국 반도체 학술 대회 (KCS) 2018, pp.663-663
Language
English
Type
Conference Paper
KSP Keywords
GaN HEMT, SiC device, Via-hole, active region