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Conference Paper
Fabrication and Characteristics of GaN HEMT on SiC Device with Internal Backside Via-hole in Active Region for MMIC Applications
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- Authors
- Byoung-Gue Min, Kyu-Jun Cho, Jong Min Lee, Seong-Il Kim, Hyung Sup Yoon, Haecheon Kim, Ho-Kyun Ahn, Hyun-Wook Jung, Sung-Jae Chang, Jae-Won Do, Min Jeong Shin, Jong-Won Lim
- Issue Date
- 2018-02
- Citation
- 한국 반도체 학술 대회 (KCS) 2018, pp.663-663
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- GaN HEMT, SiC device, Via-hole, active region