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Conference Paper Top Gate MoSe2 FET with Low Damage Deposition of Al2O3 Gate Dielectric
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Authors
Hyun-Jun Chai, Sun Jin Yun, Kwang Hoon Jung, Hang Kang, So Hyun Kim
Issue Date
2018-11
Citation
International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2018, pp.1-1
Language
English
Type
Conference Paper
KSP Keywords
Low damage, gate dielectric, top-gate