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Conference Paper
Top Gate MoSe2 FET with Low Damage Deposition of Al2O3 Gate Dielectric
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- Authors
- Hyun-Jun Chai, Sun Jin Yun, Kwang Hoon Jung, Hang Kang, So Hyun Kim
- Issue Date
- 2018-11
- Citation
- International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2018, pp.1-1
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- Low damage, gate dielectric, top-gate