상세정보
학술지
Post-Heat Treatment on Cu(In,Ga)Se2 Solar Cells with CBD-ZnS Buffer Layers as a Function of ITO Growth Temperature
- 발행일
- 201811
- 출처
- Applied Science and Convergence Technology, v.27 no.6, pp.189-193
- 출판사
- 한국진공학회
- 협약과제
- 18JB1800, 무독성 버퍼층을 갖는 다색 플렉서블 박막 태양전지 기술 개발, 정용덕
- 초록
- We fabricated Cu(In,Ga)Se2 (CIGS) solar cells with a the chemical bath deposition-ZnS buffer layer by varying the substrate temperature for indium tin oxide (ITO) growth (Tsub.ITO) from room temperature (RT) to 200 oC. The CIGS solar cell efficiency increased with increasing Tsub.ITO. After light soaking (LS), the CIGS solar cell performance improved noticeably, with a rise in fill factor, except for Tsub.ITO at RT, due to the high resistivity of ITO film. Post heat treatment (PHT) was carried out on the CIGS solar cells, in ambient air at 200 oC, with increasing annealing time, from 10 min to 1 h. After PHT for more than 10 min, cell performance was superior to that after LS at Tsub.ITO ≤ 100 oC, with substantially increased cell efficiency. This was due to simultaneously enhancing the quality of the ITO film with supplementing thermal energy, and curing a defect at the p-n junction. At Tsub.ITO ≥ 150 oC, cell performance improved after LS, compared to after PHT, regardless of the annealing time. After LS, photoexcited carriers were generated, which was beneficial for curing defects at the p-n junction, resulting in elevating cell performance. However, after PHT, excessive thermal energy was injected into the solar cell, which induced Zn diffusion into the CIGS absorber layer, forming different defect states, such as ZnCu and Zni, from the defect located at the p-n junction.
- KSP 제안 키워드
- 1 H, Annealing time, CIGS absorber layer, CIGS solar cell, Chemical bath deposition(CBD), Field effect transistors(Substrate temperature), High resistivity, ITO film, Light soaking, P-N junction, Performance improved