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학술대회 A 28-GHz 28.5-dBm Power Amplifier using 0.15-μm InGaAs E-mode pHEMT Technology
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저자
이희동, 공선우, 박봉혁, 이광천, 박정수, 김정근
발행일
201811
출처
International SoC Design Conference (ISOCC) 2018, pp.257-258
DOI
https://dx.doi.org/10.1109/ISOCC.2018.8649905
협약과제
18HF1500, 5G 이동통신용 밀리미터파(40GHz 이하) 빔포밍 부품 개발, 김광선
초록
This paper describes the design of a 28-GHz 28.5-dBm power amplifier using a 0.15-μm InGaAs E-mode pHEMT technology. We have sought a method to obtain the required output power through the characteristics of the unit transistor provided by the manufacturer. For this purpose, the PA circuit is configured to effectively combine the output signals of eight unit transistors. As a result of the verification, 28.5-dBm output was obtained at 28-GHz and the maximum efficiency was more than 24.5%. The power amplifier draws 335 mA under a 6.4 V supply at 28.5-dBm output.
키워드
28 GHz, 5G, Millimeter wave, PHEMT, Power amplifier
KSP 제안 키워드
28 GHz, E-mode, Output power, maximum efficiency, millimeter wave(mmWave), power amplifiers(PAs)