상세정보
학술대회
A 28-GHz 28.5-dBm Power Amplifier using 0.15-μm InGaAs E-mode pHEMT Technology
- 발행일
- 201811
- 출처
- International SoC Design Conference (ISOCC) 2018, pp.257-258
- 협약과제
- 18HF1500, 5G 이동통신용 밀리미터파(40GHz 이하) 빔포밍 부품 개발, 김광선
- 초록
- This paper describes the design of a 28-GHz 28.5-dBm power amplifier using a 0.15-μm InGaAs E-mode pHEMT technology. We have sought a method to obtain the required output power through the characteristics of the unit transistor provided by the manufacturer. For this purpose, the PA circuit is configured to effectively combine the output signals of eight unit transistors. As a result of the verification, 28.5-dBm output was obtained at 28-GHz and the maximum efficiency was more than 24.5%. The power amplifier draws 335 mA under a 6.4 V supply at 28.5-dBm output.
- KSP 제안 키워드
- E-mode, Output power, maximum efficiency, power amplifiers(PAs)