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Field Emission Performance of Boron Nitride Nanotube Emitters According to Vacuum Pressure
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- Authors
- Ki Nam Yun, Jin-Woo Jeong, Jun-Tae Kang, Sora Park, Jae-Woo Kim, Yoon-Ho Song, Jun Soo Han, Cheol Jin Lee
- Issue Date
- 2018-07
- Citation
- International Vacuum Nanoelectronics Conference (IVNC) 2018, pp.1-2
- Language
- English
- Type
- Conference Paper
- Project Code
- 18JB1700, Development of New Concept-Digital X-ray Sources and Their Application to Next Generation-Dedicated (No Compression, No Pain) Breast CT Technology , Yoon-Ho Song
- Abstract
- Field emission performance of boron nitride nanotube (BNNT) fabricated by simple filtration-transfer method, were evaluated according to vacuum pressure to estimate its potential use for robust electron sources. Even though there is little change in the current density-electric field characteristics, the stability test for a relatively long time shows somewhat large degradation at a vacuum pressure of over 10-5 Torr. To investigate a key factor of the degradation, we changed the vacuum ambient from air to argon. Under argon ambient condition, the current degradation and fluctuation rates were almost the same as those measured under air ambient at a vacuum pressure of 10-5 Torr. Consequently, ion bombardment dominantly induced the current degradation of the BNNT field emitters rather than oxidation effect.
- KSP Keywords
- Argon ambient, Boron nitride(BN), Boron nitride nanotube, Field emission performance, Key factor, Long Time, Pressure field, Transfer method, Vacuum pressure, air ambient, ambient conditions