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Conference Paper Field Emission Performance of Boron Nitride Nanotube Emitters According to Vacuum Pressure
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Authors
Ki Nam Yun, Jin-Woo Jeong, Jun-Tae Kang, Sora Park, Jae-Woo Kim, Yoon-Ho Song, Jun Soo Han, Cheol Jin Lee
Issue Date
2018-07
Citation
International Vacuum Nanoelectronics Conference (IVNC) 2018, pp.1-2
Publisher
IEEE
Language
English
Type
Conference Paper
DOI
https://dx.doi.org/10.1109/IVNC.2018.8520167
Abstract
Field emission performance of boron nitride nanotube (BNNT) fabricated by simple filtration-transfer method, were evaluated according to vacuum pressure to estimate its potential use for robust electron sources. Even though there is little change in the current density-electric field characteristics, the stability test for a relatively long time shows somewhat large degradation at a vacuum pressure of over 10-5 Torr. To investigate a key factor of the degradation, we changed the vacuum ambient from air to argon. Under argon ambient condition, the current degradation and fluctuation rates were almost the same as those measured under air ambient at a vacuum pressure of 10-5 Torr. Consequently, ion bombardment dominantly induced the current degradation of the BNNT field emitters rather than oxidation effect.
KSP Keywords
Argon ambient, Boron nitride nanotube(BNNT), Electric Field, Field emission performance, Key factors, Long time, Pressure field, Transfer method, Vacuum pressure, air ambient, ambient conditions