상세정보
학술지
Flexible P-type PEDOT:PSS/a-Si:H Hybrid Thin Film Solar Cells with Boron-doped Interlayer
- 발행일
- 201803
- 출처
- Solar Energy, v.163, pp.398-404
- ISSN
- 0038-092X
- 출판사
- Elsevier
- 협약과제
- 17HB1300, 차세대 신기능 스마트디바이스 플랫폼을 위한 대면적 이차원소재 및 소자 원천기술 개발, 윤선진
- 초록
- We reported highly flexible a-Si:H thin film solar cells with p-type poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) window. We firstly adopted the substrate-type cell structure on 75 μm-thick polyimide (PI) film unlike earlier studies in which the superstrate-type cell structures were utilized and the deformation of PEDOT:PSS was inevitably caused by subsequent deposition processes. We clearly demonstrated that the performance of the hybrid a-Si:H thin film solar cells with the substrate-type structure was superior to that of the superstrate-type cells. A highly boron-doped interlayer (IL) of 5 nm thickness was introduced at the hetero-interface between the p-type PEDOT:PSS and intrinsic a-Si:H to enhance built-in potential and form a homogeneous p/i-junction in the cell, which led to further improvement in the cell performance. The efficiencies of the cells with the PEDOT:PSS/IL window on glass and PI substrates were 7.40% and 6.52%, respectively, which were considerably higher than that of the cell with a conventional p-type microcrystalline (μc-) Si:H window. Also, the degradation of the cell with PEDOT:PSS window by bending was much smaller than the cell with p-type μc-Si:H window, particularly at bending radius < 10 mm. The present work demonstrates that PEDOT:PSS with a proper interfacial layer is a promising p-type window for substrate-type a-Si:H thin film solar cells and also for enhancing the flexibility of inorganic light absorbing materials-based solar cells on flexible film substrates.
- KSP 제안 키워드
- 4-Ethylenedioxythiophene(EDOT), 5 nm, Bending radius, Boron-doped, Built-in potential, Cell structure, Flexible film, Hetero-interface, Highly flexible, Polyimide (PI) film, Polystyrene sulfonate