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학술지 Facile Dry Surface Cleaning of Graphene by UV Treatment
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저자
김진홍, Mohd Musaib Haidari, 최진식, 김학성, 유영준, 박종혁
발행일
201805
출처
Journal of the Korean Physical Society, v.72 no.9, pp.1045-1051
ISSN
0374-4884
출판사
한국물리학회 (KPS)
DOI
https://dx.doi.org/10.3938/jkps.72.1045
협약과제
17PB6300, 대면적 그래핀 기판을 이용한 저비용, 고품위의 III-V 나노와이어 발광소자 개발, 박종혁
초록
Graphene has been considered an ideal material for application in transparent lightweight wearable electronics due to its extraordinary mechanical, optical, and electrical properties originating from its ordered hexagonal carbon atomic lattice in a layer. Precise surface control is critical in maximizing its performance in electronic applications. Graphene grown by chemical vapor deposition is widely used but it produces polymeric residue following wet/chemical transfer process, which strongly affects its intrinsic electrical properties and limits the doping efficiency by adsorption. Here, we introduce a facile dry-cleaning method based on UV irradiation to eliminate the organic residues even after device fabrication. Through surface topography, Raman analysis, and electrical transport measurement characteristics, we confirm that the optimized UV treatment can recover the clean graphene surface and improve graphene-FET performance more effectively than thermal treatment. We propose our UV irradiation method as a systematically controllable and damage-free post process for application in large-area devices.
KSP 제안 키워드
Chemical Vapor Deposition, Dry surface, Electrical transport measurement, Organic residues, Post process, Raman analysis, Surface Cleaning, Surface Topography, Thermal treatments, UV irradiation, UV treatment