상세정보
학술지
Interband Transitions in Monolayer and Few-Layer WSe2 Probed Using Photoexcited Charge Collection Spectroscopy
- 저자
- 최경희, 이기문, 유상혁, 오세훈, 최형준, 배희선, 임성일
- 발행일
- 201806
- 출처
- ACS Applied Materials & Interfaces, v.10 no.24, pp.20213-20218
- ISSN
- 1944-8244
- 출판사
- American Chemical Society(ACS)
- 협약과제
- 18MB1200, 모바일 완전입체 단말 및 콘텐츠 기술 개발, 황치선
- 초록
- Transition-metal dichalcogenides are currently under rigorous investigation because of their distinct layer-dependent physical properties originating from the corresponding evolution of the band structure. Here, we report the highly resolved probing of layer-dependent band structure evolution for WSe2 using photoexcited charge collection spectroscopy (PECCS). Monolayer, few-layer, and multilayer WSe2 can be probed in top-gate field-effect transistor platforms, and their interband transitions are efficiently observed. Our theoretical calculations show a great coincidence with the PECCS results, proving that the indirect ?뙂-K and ?뙂-{\\lambda} transitions as well as the direct K-K transition are clearly resolved in multilayer WSe2 by PECCS.
- KSP 제안 키워드
- Field-effect transistors(FETs), Interband transitions, Physical Properties, Structure evolution, Theoretical calculation, band structure, few-layer, gate field, photoexcited charge collection spectroscopy(PECCS), top-gate, transition-metal dichalcogenides(TMDCs)