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Journal Article
Interband Transitions in Monolayer and Few-Layer WSe2 Probed Using Photoexcited Charge Collection Spectroscopy
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- Authors
- Kyunghee Choi, Kimoon Lee, Sanghyuck Yu, Sehoon Oh, Hyoung Joon Choi, Heesun Bae, Seongil Im
- Issue Date
- 2018-06
- Citation
- ACS Applied Materials & Interfaces, v.10, no.24, pp.20213-20218
- ISSN
- 1944-8244
- Publisher
- American Chemical Society(ACS)
- Language
- English
- Type
- Journal Article
- Abstract
- Transition-metal dichalcogenides are currently under rigorous investigation because of their distinct layer-dependent physical properties originating from the corresponding evolution of the band structure. Here, we report the highly resolved probing of layer-dependent band structure evolution for WSe2 using photoexcited charge collection spectroscopy (PECCS). Monolayer, few-layer, and multilayer WSe2 can be probed in top-gate field-effect transistor platforms, and their interband transitions are efficiently observed. Our theoretical calculations show a great coincidence with the PECCS results, proving that the indirect ?뙂-K and ?뙂-{\\lambda} transitions as well as the direct K-K transition are clearly resolved in multilayer WSe2 by PECCS.
- KSP Keywords
- Field-effect transistors(FETs), Interband transitions, Physical Properties, Structure evolution, Theoretical calculation, band structure, few-layer, gate field, photoexcited charge collection spectroscopy(PECCS), top-gate, transition-metal dichalcogenides(TMDCs)