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Detail
Journal Article
Deposition Pressure Dependent Electric Properties of (Hf; Zr)O2 Thin Films Made by RF Sputtering Deposition Method
- Authors
- S. E. Moon, J. H. Kim, J. P. Im, J. Lee, S. Y. Im, S. H. Hong, S. Y. Kang, S. M. Yoon
- Issue Date
- 2018-12
- Citation
- Journal of the Korean Physical Society, v.73 no.11, pp.1712-1715
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Project Code
- 18ZB1800, Development of Neuromorphic Hardware by using High Performance Memristor Device based on Ulta-thin Film Structure, Moon Seungeon
- Abstract
- To study the applications for ferroelectric non-volatile memory and ferroelectric memristor, etc., deposition pressure dependent electric the properties of (Hf, Zr)O2 thin films by RF sputtering deposition method were investigated. The bottom electrode was TiN thin film to produce stress effect on the formation of orthorhombic phase and top electrode was Pt thin film by DC sputtering deposition. Deposition pressure was varied along with the same other deposition conditions, for example, sputtering power, target to substrate distance, post-annealing temperature, annealing gas, annealing time, etc. The structural and electric properties of the above thin films were investigated. As a result, it is confirmed that the electric properties of the (Hf, Zr)O2 thin films depend on the deposition pressure which affects structural properties of the thin films, such as, structural phase, ratio of the constituents, etc.
- KSP Keywords
- Annealing temperature, Annealing time, Bottom electrode, DC Sputtering, Deposition conditions, Deposition method, Deposition pressure, Non-Volatile Memory(NVM), Orthorhombic phase, Post-annealing, Pt thin film