상세정보
학술지
Deposition Pressure Dependent Electric Properties of (Hf; Zr)O2 Thin Films Made by RF Sputtering Deposition Method
- 발행일
- 201812
- 출처
- Journal of the Korean Physical Society, v.73 no.11, pp.1712-1715
- ISSN
- 0374-4884
- 출판사
- 한국물리학회 (KPS)
- 협약과제
- 18ZB1800, 초박막 구조 기반 고성능 멤리스터 소자를 이용한 뉴로모픽 하드웨어 개발, 문승언
- 초록
- To study the applications for ferroelectric non-volatile memory and ferroelectric memristor, etc., deposition pressure dependent electric the properties of (Hf, Zr)O2 thin films by RF sputtering deposition method were investigated. The bottom electrode was TiN thin film to produce stress effect on the formation of orthorhombic phase and top electrode was Pt thin film by DC sputtering deposition. Deposition pressure was varied along with the same other deposition conditions, for example, sputtering power, target to substrate distance, post-annealing temperature, annealing gas, annealing time, etc. The structural and electric properties of the above thin films were investigated. As a result, it is confirmed that the electric properties of the (Hf, Zr)O2 thin films depend on the deposition pressure which affects structural properties of the thin films, such as, structural phase, ratio of the constituents, etc.
- KSP 제안 키워드
- Annealing temperature, Annealing time, Bottom electrode, DC Sputtering, Deposition conditions, Deposition method, Deposition pressure, Non-Volatile Memory(NVM), Orthorhombic phase, Post-annealing, Pt thin film