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학술지 Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors
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저자
남수지, 정용진, 김주연, 양한솔, 장재영
발행일
201901
출처
Applied Sciences, v.9 no.1, pp.1-8
ISSN
2076-3417
출판사
MDPI AG
DOI
https://dx.doi.org/10.3390/app9010002
협약과제
18HB2500, 디스플레이 일체형 투명 틀렉서블 복합 생체인식 디바이스 핵심기술 개발, 안성덕
초록
Here, we report on the use of a graphene oxide (GO)/polystyrene (PS) bilayer as a gate dielectric for low-voltage organic field-effect transistors (OFETs). The hydrophilic functional groups of GO cause surface trapping and high gate leakage, which can be overcome by introducing a layer of PS-a hydrophobic polymer-onto the top surface of GO. The GO/PS gate dielectric shows reduced surface roughness and gate leakage while maintaining a high capacitance of 37.8 nF cm-2. The resulting OFETs show high-performance operation with a high mobility of 1.05 cm2 V-1 s-1 within a low operating voltage of -5 V.
KSP 제안 키워드
AND gate, Field-effect transistors(FETs), First Stokes(S1), Functional group, Gate leakage, Graphene oxide(GOS), High Mobility, High performance, Hydrophobic polymer, Low operating voltage, Organic field-effect
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