BROWSE
Detail
Journal Article
Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors
- Authors
- Sooji Nam, Yong Jin Jeong, Joo Yeon Kim, Hansol Yang, Jaeyoung Jang
- Issue Date
- 2019-01
- Citation
- Applied Sciences, v.9, no.1, pp.1-8
- ISSN
- 2076-3417
- Publisher
- MDPI AG
- Language
- English
- Type
- Journal Article
- Abstract
- Here, we report on the use of a graphene oxide (GO)/polystyrene (PS) bilayer as a gate dielectric for low-voltage organic field-effect transistors (OFETs). The hydrophilic functional groups of GO cause surface trapping and high gate leakage, which can be overcome by introducing a layer of PS-a hydrophobic polymer-onto the top surface of GO. The GO/PS gate dielectric shows reduced surface roughness and gate leakage while maintaining a high capacitance of 37.8 nF cm-2. The resulting OFETs show high-performance operation with a high mobility of 1.05 cm2 V-1 s-1 within a low operating voltage of -5 V.
- KSP Keywords
- AND gate, Field-effect transistors(FETs), First Stokes(S1), Functional group, Gate leakage, Graphene oxide(GOS), High Mobility, High performance, Hydrophobic polymer, Low operating voltage, Organic field-effect
This work is distributed under the term of Creative Commons License (CCL)
(CC BY)
(CC BY)
