상세정보
학술지
Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors
- 발행일
- 201901
- 출처
- Applied Sciences, v.9 no.1, pp.1-8
- ISSN
- 2076-3417
- 출판사
- MDPI AG
- 협약과제
- 18HB2500, 디스플레이 일체형 투명 틀렉서블 복합 생체인식 디바이스 핵심기술 개발, 안성덕
- 초록
- Here, we report on the use of a graphene oxide (GO)/polystyrene (PS) bilayer as a gate dielectric for low-voltage organic field-effect transistors (OFETs). The hydrophilic functional groups of GO cause surface trapping and high gate leakage, which can be overcome by introducing a layer of PS-a hydrophobic polymer-onto the top surface of GO. The GO/PS gate dielectric shows reduced surface roughness and gate leakage while maintaining a high capacitance of 37.8 nF cm-2. The resulting OFETs show high-performance operation with a high mobility of 1.05 cm2 V-1 s-1 within a low operating voltage of -5 V.
- KSP 제안 키워드
- AND gate, Field-effect transistors(FETs), First Stokes(S1), Functional group, Gate leakage, Graphene oxide(GOS), High Mobility, High performance, Hydrophobic polymer, Low operating voltage, Organic field-effect
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